IGBT 4500V Search Results
IGBT 4500V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GT50J123 |
![]() |
IGBT, 600 V, 59 A, TO-3P(N) |
![]() |
||
GT20J121 |
![]() |
IGBT, 600 V, 20 A, TO-220SIS |
![]() |
||
GT30J121 |
![]() |
IGBT, 600 V, 30 A, TO-3P(N) |
![]() |
||
GT30J122A |
![]() |
IGBT, 600 V, 30 A, TO-3P(N) |
![]() |
||
GT20N135SRA |
![]() |
IGBT, 1350 V, 40 A, Built-in Diodes, TO-247 |
![]() |
IGBT 4500V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: IGBT MODULE MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version Target Specification Unit in mm OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. |
Original |
MBN1200H45E2 000cycles) | |
Hitachi DSA00281
Abstract: MBN800
|
Original |
IGBT-SP-10014 MBN800H45E2 000cycles) Hitachi DSA00281 MBN800 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R2 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. |
Original |
IGBT-SP-10004 MBN800H45E2-H 000cycles) | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R1 MBN800H45E2-H P1 Target Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. |
Original |
IGBT-SP-10004 MBN800H45E2-H 000cycles) | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-10014 R1 MBN800H45E2 Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. |
Original |
IGBT-SP-10014 MBN800H45E2 000cycles) | |
MBN1200H45E2-HContextual Info: IGBT MODULE Spec.No.IGBT-SP-09017 R5 MBN1200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. |
Original |
IGBT-SP-09017 MBN1200H45E2-H 000cycles) MBN1200H45E2-H | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES Low conduction loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. |
Original |
IGBT-SP-08007 MBN1200H45E2 000cycles) | |
mbn800h45e2hContextual Info: IGBT MODULE Spec.No.IGBT-SP-10004 R0 MBN800H45E2-H Target Specification Silicon N-channel IGBT 4500V E2 version OUTLINE DRAWING FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. |
Original |
IGBT-SP-10004 MBN800H45E2-H 000cycles) mbn800h45e2h | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09017 R7 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low switching loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability. |
Original |
IGBT-SP-09017 MBN1200H45E2-H 000cycles) | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09017 R8 MBN1200H45E2-H Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. |
Original |
IGBT-SP-09017 MBN1200H45E2-H 000cycles) | |
MBN1200H45Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08007 R6 MBN1200H45E2 Silicon N-channel IGBT 4500V E2 version FEATURES ∗ Low conduction loss IGBT module. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module. ∗ High thermal fatigue durability. |
Original |
IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45 | |
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES Low switching loss IGBT module. Low noise due to ultra soft fast recovery diode. Isolated heat sink terminal to base . |
Original |
IGBT-SP-12010 MBM200H45E2-H | |
MBN1200H45E2
Abstract: Hitachi DSA00281
|
Original |
IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 Hitachi DSA00281 | |
MBN1200H45E2
Abstract: MBN1200H45
|
Original |
IGBT-SP-08007 MBN1200H45E2 000cycles) MBN1200H45E2 MBN1200H45 | |
|
|||
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
|
Original |
DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor | |
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
|
Original |
4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 | |
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S45KL3_B5 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 4500V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen • Hochleistungsumrichter |
Original |
DD1200S45KL3 | |
FZ1200R45KL3Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R45KL3_B5 VCES = 4500V |
Original |
FZ1200R45KL3 | |
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
|
Original |
DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes | |
DTS 423Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R45KL3_B5 VCES = 4500V |
Original |
FZ800R45KL3 DTS 423 | |
DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
|
Original |
DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A | |
norfolk capacitors
Abstract: IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 4500v
|
Original |
GC2661 GC2662 GC2663 GC2681 GC2682 GC2683 GC2684 GC2685 GC2686 GC2687 norfolk capacitors IGCT thyristor GC2663 GC2672 NCL capacitor NCL GTO Thyristor protection capacitor snubbers norfolk IGCT GC2661 4500v | |
DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
|
Original |
DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor | |
NCL capacitor
Abstract: GT2588 norfolk capacitors GT2593 NCL capacitor gt1847 NCL GTO Thyristor protection capacitor GT2587 snubbers norfolk GT1849 IGCT capacitor
|
Original |
GT1846 GT1847 GT2586 GT2587 GT2588 GT2589 GT2590 GT2591 GT2592 GT2593 NCL capacitor GT2588 norfolk capacitors GT2593 NCL capacitor gt1847 NCL GTO Thyristor protection capacitor GT2587 snubbers norfolk GT1849 IGCT capacitor |