IGBT THYRISTOR Search Results
IGBT THYRISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) |
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GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS |
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GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) |
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GT20N135SRA |
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IGBT, 1350 V, 40 A, Built-in Diodes, TO-247 |
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IGBT THYRISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
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DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor | |
DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
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4500Vee DS5766-4. DCR370T DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34 | |
SCR InverterContextual Info: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. |
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SPM1003 SCR Inverter | |
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
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DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes | |
DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
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DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A | |
DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
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DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor | |
200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
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PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 | |
MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
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20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h | |
DIODE 33 25
Abstract: MOSFET Modules Bridges Thyristors 3 phase Rectifier Phase Control IC thyristors Phase Control IC DIODE 19 9 IGBT PROTECTION DIODE
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VS-GA200HS60S1PBFContextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package |
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VS-GA200HS60S1PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA200HS60S1PBF | |
3 phase inverter brake chopperContextual Info: SK 55 DGL 126 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Chopper /01 " "7 |
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NCL snubber capacitor
Abstract: ZC2105 IGBT 4000V Norfolk Capacitors NCL capacitor zc2105 ZC2115 Thyristor snubber capacitor ncl zc ZC2116 ZC2601
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ZC2550 ZC2552 ZC2554 ZC2556 1024x768 ZC2557 ZC2558 ZC2559 ZC2561 NCL snubber capacitor ZC2105 IGBT 4000V Norfolk Capacitors NCL capacitor zc2105 ZC2115 Thyristor snubber capacitor ncl zc ZC2116 ZC2601 | |
bsm 25 gd 1200 n2
Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
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Contextual Info: SK 74 DGL 063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Chopper 234 & &: |
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Gleichrichter
Abstract: SKHI22A
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thyristor 900AContextual Info: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 124 N 16 RR N Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values |
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7476 ic specifications
Abstract: thyristor rectifier 600v 100a 7476 IC data 600V 100A thyristor of IC 7476 in file thyristor 50A DATA SHEET OF IGBT ir igbt of ic 7476
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IC 7476 Data
Abstract: thyristor 25A
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D711N
Abstract: D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor
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12bzw. 24-pulsige MN2000-04d D711N D1481N D2601N D3001N D471N Dioden eupec igbt 150kV thyristor gct thyristor | |
Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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GA200HS60S1PbF E78996 2002/95/EC 11-Mar-11 | |
thyristor 800AContextual Info: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 104 N 16 RR N Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values |
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Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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GA200HS60S1PbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
VS-GA200HS60S1PBFContextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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VS-GA200HS60S1PbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA200HS60S1PBF | |
2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
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IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P |