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    II A2 ZENER DIODE Search Results

    II A2 ZENER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    II A2 ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HZU-L Series

    Abstract: zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
    Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.


    Original     		PDF REJ03G0043-0100Z HZU-L Series zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332

    c2 zener renesas

    Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
    Text: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized


    Original     		PDF REJ03G0184-0300Z ADE-208-120B) c2 zener renesas B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30

    B2 Zener

    Abstract: REJ03G0180-0300Z HZ2A1
    Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized


    Original     		PDF REJ03G0180-0300Z ADE-208-117B) DO-35 B2 Zener REJ03G0180-0300Z HZ2A1

    HZU30L-1

    Abstract: Zener Diode B1 zener diode 332
    Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.


    Original     		PDF REJ03G0043-0200Z HZU30L-1 Zener Diode B1 zener diode 332

    HZ11

    Abstract: HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2
    Text: HZ H Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized


    Original     		PDF REJ03G0181-0100Z ADE-208-794) DO-35 HZ11 HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2

    GRZZ0002ZB-A

    Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B
    Text: HZ Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0180-0400 Rev.4.00 Jul 03, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.


    Original     		PDF REJ03G0180-0400 DO-35 GRZZ0002ZB-A GRZZ0002ZB-A HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B

    ZENER DIODE 1233

    Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
    Text: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.


    Original     		PDF REJ03G0184-0400 GRZZ0002ZC-A ZENER DIODE 1233 GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24

    marking A3 Taiwan semiconductor

    Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
    Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.


    Original     		PDF REJ03G0043-0300Z marking A3 Taiwan semiconductor B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1

    HZS7L diode

    Abstract: HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L
    Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z Previous: ADE-208-121A Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for


    Original     		PDF REJ03G0166-0200Z ADE-208-121A) HZS7L diode HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L

    SILICON PLANAR zener diode DO-35

    Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
    Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized


    Original     		PDF REJ03G0182-0200Z ADE-208-118A) DO-35 SILICON PLANAR zener diode DO-35 BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode

    LINEAR TECHNOLOGY mark code

    Abstract: ADE-208-236C 4.7 B2 zener PTSP0002ZA-A
    Text: HZU-LL Series Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise REJ03G1216-0400 Previous: ADE-208-236C Rev.4.00 Jul 08, 2005 Features • • • • Low noise voltage (approximately 1/3 to 1/10 lower than the HZU series). Temperature coefficient is approximately 1/2 lower than the HZU series.


    Original     		PDF REJ03G1216-0400 ADE-208-236C) PTSP0002ZA-A LINEAR TECHNOLOGY mark code ADE-208-236C 4.7 B2 zener PTSP0002ZA-A

    PTSP0002ZA-A

    Abstract: hzu6.2z
    Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1218-0200 Previous: ADE-208-581A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.


    Original     		PDF REJ03G1218-0200 ADE-208-581A) PTSP0002ZA-A Unit2607 PTSP0002ZA-A hzu6.2z

    mark 68m

    Abstract: HZM6.8MFA
    Text: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF REJ03G1209-0200 ADE-208-833A) PLSP0005ZC-A S5-900 Unit2607 mark 68m HZM6.8MFA

    PTSP0002ZA-A

    Abstract: zener mark code A2
    Text: HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1217-0200 Previous: ADE-208-795A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.


    Original     		PDF REJ03G1217-0200 ADE-208-795A) PTSP0002ZA-A Unit2607 PTSP0002ZA-A zener mark code A2

    HZM27FA

    Abstract: No abstract text available
    Text: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1213-0400 Previous: ADE-208-443C Rev.4.00 Jun 14, 2005 Features • HZM27FA has four devices, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HZM27FA REJ03G1213-0400 ADE-208-443C) HZM27FA HM27FA PLSP0005ZC-A Sy5-900 Unit2607

    HZU10G

    Abstract: HZU12G PTSP0002ZA-A zener mark code A2
    Text: HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features • Zener diode for surge absorption suitable for IEC 1000-4-2. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information


    Original     		PDF REJ03G1215-0300 PTSP0002ZA-A HZU10G HZU12G PTSP0002ZA-A zener mark code A2

    6G zener diode

    Abstract: HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
    Text: HZU-G Series Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-617A Rev.2.00 Sep 14, 2005 Features • Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are available. • Ultra small Resin Package (URP) is suitable for surface mount design.


    Original     		PDF REJ03G1205-0200 ADE-208-617A) PTSP0002ZA-A 6G zener diode HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617

    Untitled

    Abstract: No abstract text available
    Text: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1211-0300 Previous: ADE-208-783B Rev.3.00 Jun 14, 2005 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.


    Original     		PDF REJ03G1211-0300 ADE-208-783B) PLSP0005ZC-A Junc5-900 Unit2607

    ADE-208-796B

    Abstract: No abstract text available
    Text: HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1206-0300 Previous: ADE-208-796B Rev.3.00 Jun 03, 2005 Features • HZM5.6ZFA has four devices, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.


    Original     		PDF REJ03G1206-0300 ADE-208-796B) PLSP0005ZC-A Junction5-900 Unit2607 ADE-208-796B

    HZB6.8MWA

    Abstract: No abstract text available
    Text: HZB6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1256-0200 Previous: ADE-208-971A Rev.2.00 Sep 13, 2005 Features • HZB6.8MWA has two devices in a monolithic, and can absorb surge. • CMPAK Package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF REJ03G1256-0200 ADE-208-971A) PTSP0003ZB-A -55ijing HZB6.8MWA

    zener 5.1 B2

    Abstract: zener 3.3 b2 HZ24-1 30 B2 zener Zener Diode C3 5 zener diode 2.7 b2 22 B2 zener c2 zener zener series hz
    Text: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 November 1996 Features • Low leakage, low zener impedance and maximum power dissipation o f 500 mW are ideally suited for stabilized power supply, etc.


    OCR Scan     		PDF ADE-208-117A DO-35 DO-35 SC-48 zener 5.1 B2 zener 3.3 b2 HZ24-1 30 B2 zener Zener Diode C3 5 zener diode 2.7 b2 22 B2 zener c2 zener zener series hz

    HZ7L

    Abstract: HZ6L
    Text: HZ-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features Outline • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are


    OCR Scan     		PDF DO-35_ 180x1 HZ7L HZ6L

    marking code 9c diode

    Abstract: No abstract text available
    Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for


    OCR Scan     		PDF ADE-208-121A HZS36-3L DO-34 marking code 9c diode

    ZENER 232

    Abstract: ZENER A4 zener Y4
    Text: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ Ip = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (T a = 25°C unless otherwise noted<25>, (Vp = 0.9 V Max. @ Ip = 1 0 mA for all types) Zener Voltage VZ1 (Volts)


    OCR Scan     		PDF OD-123 ZENER 232 ZENER A4 zener Y4