II A2 ZENER DIODE Search Results

zener 5.1 B2

Abstract: zener 3.3 b2 HZ24-1 30 B2 zener Zener Diode C3 5 zener diode 2.7 b2 22 B2 zener c2 zener zener series hz
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-117A Z Rev 1 November 1996 Features • Low leakage, low zener impedance and maximum power dissipation o f 500 mW are ideally suited for stabilized power supply, etc.

HZ7L

Abstract: HZ6L
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features Outline • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are

marking code 9c diode

Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

HZU-L Series

Abstract: zener mark code A2 zener diode marking 333 361 Zener diode marking zener diode 332
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0100Z Rev.1.00 Jun.05.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

c2 zener renesas

Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

B2 Zener

Abstract: REJ03G0180-0300Z HZ2A1
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0180-0300Z Previous: ADE-208-117B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized

HZU30L-1

Abstract: Zener Diode B1 zener diode 332
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

HZ11

Abstract: HZ12 HZ15 HZ16 HZ20 HZ24 HZ30 HZ36 39b2
Contextual Info: HZ H Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0181-0100Z (Previous: ADE-208-794) Rev.1.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized

GRZZ0002ZB-A

Abstract: HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ11B
Contextual Info: HZ Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0180-0400 Rev.4.00 Jul 03, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

ZENER DIODE 1233

Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Contextual Info: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

marking A3 Taiwan semiconductor

Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.

HZS7L diode

Abstract: HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z Previous: ADE-208-121A Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

SILICON PLANAR zener diode DO-35

Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

ZENER 232

Abstract: ZENER A4 zener Y4
Contextual Info: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ Ip = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (T a = 25°C unless otherwise noted<25>, (Vp = 0.9 V Max. @ Ip = 1 0 mA for all types) Zener Voltage VZ1 (Volts)

PTSP0002ZA-A

Abstract: hzu6.2z
Contextual Info: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1218-0200 Previous: ADE-208-581A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.

mark 68m

Abstract: HZM6.8MFA
Contextual Info: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

PTSP0002ZA-A

Abstract: zener mark code A2
Contextual Info: HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1217-0200 Previous: ADE-208-795A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.

PTSP0002ZA-A

Contextual Info: HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1219-0200 Previous: ADE-208-777A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 25 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.

HZM27FA

Contextual Info: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1213-0400 Previous: ADE-208-443C Rev.4.00 Jun 14, 2005 Features • HZM27FA has four devices, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

HZU10G

Abstract: HZU12G PTSP0002ZA-A zener mark code A2
Contextual Info: HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features • Zener diode for surge absorption suitable for IEC 1000-4-2. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

6G zener diode

Abstract: HZU8.2G HZU10G HZU12G PTSP0002ZA-A ADE-208-617
Contextual Info: HZU-G Series Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-617A Rev.2.00 Sep 14, 2005 Features • Zener diode for surge absorb suitable for IEC 1000-4-2 and 5 to 10V products are available. • Ultra small Resin Package (URP) is suitable for surface mount design.

Contextual Info: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1211-0300 Previous: ADE-208-783B Rev.3.00 Jun 14, 2005 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.

ADE-208-796B

Contextual Info: HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1206-0300 Previous: ADE-208-796B Rev.3.00 Jun 03, 2005 Features • HZM5.6ZFA has four devices, and can absorb surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line.

HZB6.8MWA

Contextual Info: HZB6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1256-0200 Previous: ADE-208-971A Rev.2.00 Sep 13, 2005 Features • HZB6.8MWA has two devices in a monolithic, and can absorb surge. • CMPAK Package is suitable for high density surface mounting and high speed assembly.