IM 383 IC Search Results

TA7323

Abstract: 2N5671 2N5872
Contextual Info: 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Military, industrial and Commercial Equipment Feature*: • M a x im u m S a fe -A re a -o f-O p e ra tio n C urves Is/» lim it lin e b e g in n in g a t 24 V

2SC383

Abstract: VQE 12 TA320S TA320 K4080
Contextual Info: 2s c 383 o T ° TV • V ^ p ip * F in a l P ic tu r e S í l l í # r - i- ; IF A m p lif ie r O p e = ,3 3 d B T y p . • ¿ M A X IM U M R A T IN G S C H A R A C T E R IS T IC 3 1/ ? • -< # i •a u f jn í -y ^ Í n \S í -V ^ M îïŒ ( f = 100M Hz )

speaker with screen

Abstract: ac mazda
Contextual Info: PEN. 383 BEAM POWER AC/DC AMPLIFIER FOR MAINS R A T IN G . H e a te r V oltag e H e a te r C u rr e n t A m p s . . M a x im u m A n o d e V oltage M a xim um Screen V oltage M a xim um A n o d e D issipatio n (w a tts ) * M u tu a l C onductance (m A V )

ASTM-B-196

Abstract: HD-20 QQ-B-613 MIL-C-39029 connector contacts
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR ALL 2 P U B L IC A T IO N R IG H T S LOC RESERVED. DF C O P Y R IG H T D IS T REVISIONS DO D E S C R IP T IO N R EVISED .3 7 5 D RER DWN ECO-11-005030 APVD HMR I 1M AR11 D M AX C+.020 POST IN A

NDL5314P

Contextual Info: 3DE D N E C • ELECTRONICS fcj4E7555 D G 2 ei4SÖ S ■ INC LIGHT EM ITTING DIODE NDL5314P 1 300 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LED M O DU LE D E S C R IP T IO N NDL5314P is a 1 300 nm InGaAsP double heterostructure L E D with fiber pigtail. It is designed for high speed optical data

Bpy 43

Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
Contextual Info: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)

M41256A

Abstract: 41256A
Contextual Info: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications

Contextual Info: K S lE W 5 S i ? S Temperature charaderislics S S lt t Impedance raion al lOOHi Rntaa w*tage(V) S.i 10 ID if 35 5C- S3 ZW Zw i 3 Ì f i ! 2 l*Krim a 3 « ( 3 a 3 I u s e , jO*fi3t%E5iooo/JiBi. « « i K l ' W l o S M Ö J I S T * : A fte r oaolylng rated voltage for IMO ncura at t o s t tuen resumed 18 icursi

ditti

Abstract: DS90C383 DS90C383MTD DS90CF384 DS90CF384MTD DS90CR583 MTD56
Contextual Info: Semiconductor D S90C 383/D S90C F384 +3.3V Program m able LVDS Transm itter 24-B it Flat Panel Display FPD Link— 65 MHz +3.3V LVDS Receiver 24-Bit Flat Panel Display (FPD) Link— 65 MHz General Description Features The D S90C 383 transm itter converts 28 bits o f C M O S /TTL

7400l

Abstract: mh 7400 MC7400P 6321P MC5400L MC7450P MC5450L CETA
Contextual Info: MTTL M C 7400P series MTTL M C 5 40 0 L /7 4 0 0 L series EXPAN D ABLE DUAL 2 -W ID E 2 -IN P U T "A N D -O R -IN V E R T " G A T E MC5450L* MC7450P,L* 1 T h i s d e v ic e c o n s is t s o f t w o A N D -O R -I N V E R T gates, o n e o f w h ic h i s O R e x p a n d a b le . E a c h g a t e is m a d e u p

tx 2G

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i c a t i o n s : @25°C PRI OCL: 1.115 Max cj ° V aj d PRI Q: 8 Min C w /w : â 0,035 ——I I— 0 .0 0 4 M in 0 .0 2 5 M ax- HHHHHHHHHHHHHHHHHHHH • Typ TX&RCV 1 0 0 K H z 5 0 m V

GM5ZR01200A

Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
Contextual Info: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent

sm 126 ao

Abstract: MSM41256A MSM41256A-10 MSM41256A-12 MSM41256A-15
Contextual Info: S8E D O K I • L 7 2 4 2 4 D 0012bfib 7 41 H O K I J S E M I C O N D U C T O R GROUP O K I semiconductor MSM41256A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> _ GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as

8j50

Abstract: l851 b ed date sheet
Contextual Info: A TROMPETER DRAWING AND PART NO. RE QU ES T T IT L E H NO DRAWING A D - P L Z O / C J X Q - K ! ' • ß J S ’O REV ft DRAWING NO. A S S IG N E D VERBAL DATE A S SIG N ED ZO O S'-0 9 8 2 DESCRIPTiO N OR S H IP W OR K OR D ER DATE ■ « « t b o n ic » , i n c

ICP-N38

Abstract: ICP-F15 ICP-N50 ICP-N25 ICP-F25 icp n15 circuit protector ICP-N15 ICP-F50 icpn icp-s2.3
Contextual Info: yi Circuit Protection Elements • III II I I I •R O H M ’s Circuit Protection Elements ROHM overcurrent protection elements are in lightweight, small package, offering low internal impedance against -n:; i current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,

MIL-C-5015 bulkhead

Abstract: k 2761
Contextual Info: MIL-C-5015 Bulkhead Receptacles BFR/TBF How to Order TBF and BFR pressurized bulkhead receptacles BF 14S-5 P mate w ith standard M S type plugs 3106, 3107 and TB F 20 - 1 5 PS 3108 if contact arrangements correspond. Both P R E F I X -

JAE UT3

Abstract: l449 ds90
Contextual Info: + O C/3 May 1998 National <£> Semiconductor o O tn DS90C383/DS90CF384 +3.3V P r o g r a m m a b le LVDS Transm itter 24-Bit Flat Panel Display FPD) Link — 65 MHz, +3.3V LVDS R eceiv er 24-Bit Flat Panel Display (FPD) Link — 65 M H z O W 00 CO a C/5

2sd100

Contextual Info: S IL IC O N T R A N S IS T O R 2SD1001 N P N S IL IC O N E P IT A X IA L T R A N S IS T O R PO W ER M IN I M O LD D E S C R IP T IO N T h e 2 S D 1 0 0 1 is d e sign e d fo r a u d io fre q u e n c y p o w e r a m p lifie r a p p lic a tio n , e sp e c ia lly in H y b r id Inte grated C irc u its.

Contextual Info: 2 3 4 5 6 7 8 9 10 11 12 13 1 Massgebend ist nur der deutsche Text ONLY THE GERMAN LANGUAGE VERSION SHALL BE BINDING FCI Rev. Neufreigabe/ A e n d . - L i s t e -N r . Index A B ENU55U ENM70W a b •m Beschreibung fuer Produktion frei FOR PRODUCTION RELEASED

cvrv

Contextual Info: BU4S11 I I SINGLE 2-INPUT NAND GATE * W K ’T jS H /D im e n s io n s U n it: mm BU4S11 l i , 2 A f t jE lf iS N A N D ^ - h T 'f o BU4011B ^v\';D W 020 O 1 [ ! & # £ SMP(CF*3i L fc ^ J v $ !O P '> ''y ? IC T 't o The BU4S11 is a 2-input logic NAND gate. It is an

307E

Abstract: LTL-307ELC
Contextual Info: L jLITE-ON INC L .' i: . c : c ~ 31E D S53b3b7 Q002Q2E fl ILTN T-l % 5mm SOI.ID STATE LAMPS LITEM i LTL-307ELC LOW CU RRENT HIGH EF F IC IEN C Y R E D cz 'j I -M \-'Z. \ t " FEATURES • LOW POW ER C O N SU M P T IO N . • H IG H E F F IC IE N C Y . • V E R S A T IL E M O U N T IN G O N P.C. B O A R D O R

Contextual Info: 4 TH IS DRAW ING IS COPYRIGHT U N P U B L IS H E D . 3 R E LE A S E D FOR By - P U B LIC A TIO N ALL RIGHTS 2 - ,- RESERVED. LOC D IS T DF DO R E V IS IO N S P LTR D E S C R IP T IO N R 1 R E V IS E D PER DATE ECO-11-005030 DWN 11MAR11 APVD HMR — D .3 7 5 MAX

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

TELEDYNE 321 nand

Abstract: 303AL HINIL 303 teledyne tH30 BUL 380 342CL HiNil 381 teledyne 333 HiNil HINIL 332
Contextual Info: TELEDYNE COMPONENTS 2ÛE D • â*îl7tiQH QQDS171 S m Bipolar Interface Logic ■■■■ Purpose of Bipolar Interface Logic T -Y 3 ~ 0 l PROTECTING CMOS AND *lP SYSTEMS Bipolar Interface Logic - the 300 Series - is a remarkably simple solution to interfacing