IMPATT DIODE Search Results

Contextual Info: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

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Abstract: impatt diode operation IMPATT GaAs impatt diode
Contextual Info: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0

impatt diode

Contextual Info: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products

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Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Contextual Info: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band

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Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Contextual Info: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N

IMPATT

Contextual Info: IMPATT Diodes SELECTION GUIDE MODEL NUMBER PAGE MODEL NUMBER MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 MA46029 MA46030 MA46031 MA46032 MA46033 . 10-5 ! 0-5 . 10-9

Contextual Info: PG0115X Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor Material Package StylePill-C Mounting StyleS

Contextual Info: VAO12AN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power25m Frequency Min. (Hz)8G Frequency Max. (Hz)12G Efficiency Min.0.65 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current28m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: PGG202-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: PGG206-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power300m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage100 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

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Abstract: impatt diode MI5022 impatt diode datasheet IMPATT-Diode
Contextual Info: GaAs IMPATT DIODES TM MI5001 – MI5022 Features ● Specified High Output Power ● High DC to Microwave Efficiency ● For Pulsed and CW Applications Applications ● Oscillators ● Avionic Systems ● Electronic Warfare Systems ● Smart Antennas Description

Contextual Info: VAO12DN19 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: VAO12DN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.2 V(Oper.) Nom.(V) Oper. Voltage75 I(Oper.) Typ.(A) Oper. Current35m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: 5082-0437 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)5.0G Frequency Max. (Hz)9.0G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: ML4804 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.3 Frequency Min. (Hz)8.0G Frequency Max. (Hz)10G Efficiency Min.6.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: MA4989 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.2.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: VAO12CN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current25m Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: ND9S12-1N Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power2.5 Frequency Min. (Hz)13G Frequency Max. (Hz) Efficiency Min.20 V(Oper.) Nom.(V) Oper. Voltage50 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: MA4988 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power10m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18.0G Efficiency Min.1.0 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: RT8081 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)8.0G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage55 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS