IMPATT SILICON Search Results

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

impatt diode

Contextual Info: • SECTION MILLIMETER-WAVE DIODES Mb133□3 0 0 0 0 6 1 1 0 IMPATT Diodes and Test Fixtures HUGHES/ HICRObJAVE PRDTS 11E D. 3 Hughes 4710xH series IMPATT diodes are silicon double "J'-O"? - I drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink. Standard products

impatt diode

Abstract: apc-7 connector Z 0607 CW doppler radar impatt radar impatt AN-968 cw doppler impatt diode operation AN962
Contextual Info: H E W L E T T ^ PA CK ARD COMPONENTS SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 5082-0607 5082-0608 DIODES 5.9-8.4GHZ Features IMPATT AND STEP RECOVERY HIGH POWER O U TP U T Typically: 3W from 5.9 to 8.4 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IE N T OPERATIO N

impatt diode

Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Contextual Info: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band

ML4708

Abstract: IMPATT
Contextual Info: ML 400« SERIES SILICON SINGLE DRIFT IMPATT DIODES The M L 4700 Series o f single drift silicon im patt diodes are specifically designed for use as fundam ental frequency direct dc to RF conversion microwave oscillators and amplifiers in the frequency range 5-35GHz.

impatt diode

Abstract: impatt diode operation AN961 5082-0710 IMPATT
Contextual Info: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating

impatt diode

Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
Contextual Info: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

impatt diode

Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

impatt diode

Abstract: apc-7 connector impatt impatt diode operation radar impatt CW doppler radar Silicon drift diode hp 0611 diode GG 14
Contextual Info: H E W L E T T PACKARD COMPONENTS DIODES HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 10-14 GHZ Features AND STEP RECOVERY HIGH POWER O U TP U T Typically: 2.5W from 10 to 14 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IEN T O PERATIO N

T393D

Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
Contextual Info: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization

IMPATT

Abstract: L4142
Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE IMPATT DIODES Gallium Arsenide Im patt Diodes are available as flat profile, high low profile and low high low profile devices. These term s describe the doping profile in the active region o f the device. For high low and low high low profiles the avalanche region is more closely confined in the region o f peak electric

IMPATT-Diode

Abstract: impatt impatt diode IMPATT silicon 14A1 BGY12A BGY12B BGY13A BGY13B BGY14A
Contextual Info: BGY12A, -12: B, -13 A, -13 B, -14 A, -14 B IMPATT-diodes for C and X band Avalanche transit tim e ATT diodes BGY 12 A, -12 IB , -13 A, -13 B, -1 4 A and 14 B are silicon epitaxial mesa devices w ith m ultilayer glass passivation. IM P A TT-diodes are suitable fo r generating and am plifying m icrow ave pow er directly from the DC

diodes

Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
Contextual Info: M icro w ave S em ico nducto rs Contents PAGE Schottky Diodes Silicon Schottky Mixer Diodes . 404 Silicon Schottky Detector Diodes 408 Frequency Multiplier Diodes Silicon Step Recovery Diodes GaAs Multiplier Varactors Tuning Varactor Diodes Silicon Tuning Varactors

Contextual Info: Section 1 Microwave & R.F. Semiconductors M IC R O W A VE SEM IC O N D U C TO R S SILICON >. GERM ANIUM > v J K. J G ALLIUM ARSENIDE J GEC P L E S S E Y S E M I C O N D U C T O R S 23 Semiconductor Diodes

BAW70

Abstract: impatt diode BAV98 BAW69 impatt step recovery diode barrier varactor BAW 43 "Step Recovery Diode" C3936
Contextual Info: Microwave semiconductor diodes and components Microwave silicon LID-diodes ’ Type Fig. U BR) V cj at PF BAV98 39 18 0,3.0,6 BXY49/A 39 36 1,7.2,1 BXY49/B 39 36 0,4.0,8 BXY49/C 39 36 0,4.0,6 Remarks: £ /r = 6V ccase PF <t ns ÄthJC K/W Notes 0,14

Gunn Diode symbol

Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
Contextual Info: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series

diode Catalog

Abstract: impatt diode DVE4554 Gunn Diode impatt GaAs Gunn Diode DVE4550 DVE4575 DVE4570 S443
Contextual Info: 03 IND/ S E M I C O N D U C T O R 0585443 ALPHA DE'B 05Û5443 0DDD 5DD 7 1 ~ 0 3E 00 50 0 D t " 0 7 - / 9 High-“Q ” GaAs 25 Volt Series Tuning Diodes & & Features & • 50% Higher “ Q” Than Comparable Silicon Diodes • Wide Tuning Ratio • High Reliability and Space Qualified

diode Catalog

Abstract: diagram of gunn diode GUNN OSCILLATORS Gunn Diode DVE4554 DVE6950 GaAs Gunn Diode 082001 varactor alpha impatt diode
Contextual Info: , □3 D eT | 0 5 0 5 4 4 3 0585443 DOOOSOB 2 ALPHA IND/ | _ SEMICONDUCTOR 03E 00503 D I " 7 “ High-“Q ” GaAs 45 Volt Series Tuning Diodes Features • 100% Higher “ Q” Than Comparable Silicon Diodes • WirlfiTi ininn Ratio Wide Tuning High Reliability and Space Qualified

diagram of gunn diode

Abstract: GUNN OSCILLATORS DVE4575 diodes tvb IMPATT
Contextual Info: High Q GaAs Tuning Diodes Features • ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types -J* DVE4500 Series DVE6900 Series Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The

IMPATT

Contextual Info: MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH X-BAND ■ CAN BE SCREENED TO TX, TXV SPECIFICATIONS Applications The MA45300 series of silicon planar abrupt junction tun­

MICROWAVE ASSOCIATES

Abstract: IMPATT
Contextual Info: INTRODUCTION This catalog of microwave and RF semiconductor products from M/A-COM Burlington Semiconductor Operations represents more than 40 years of world leadership in supplying the industry with high performance, high quality semiconductor products. The technology

IMPATT

Contextual Info: RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally

Gunn Diode 72 GHz

Abstract: MA456
Contextual Info: AfoCC-û MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE \ i * r h f— — J 4 ■ LOW POST TUNING DRIFT - ■ CUSTOM DESIGNS AVAILABLE 1 = 54 / - "V V / ^ ■ FREQUENCY RANGE THROUGH

gunn diode x band series 45200

Abstract: MA45200 A4520
Contextual Info: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES ■ CUSTOM DESIGNS AVAILABLE ■ LOW POST TUNING DRIFT ■ FREQUENCY RANGE VHF — Ku-BAND ■ CAN BE SCREENED TO TX, TXV