GC15000
Abstract: TM 937 GC15001 GC15001-00 GC15002-00 GC15003-00 GC15004-00 GC15013 GC15002
Text: GC15001 – GC15013 TUNING DIODES Frequency Linear Tuning Varactors TM RoHS Compliant KEY FEATURES A Frequency Linear Tuning Varactor FLTVAR is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.
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GC15001
GC15013
GC15xxxx
GC15000
TM 937
GC15001
GC15001-00
GC15002-00
GC15003-00
GC15004-00
GC15013
GC15002
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Untitled
Abstract: No abstract text available
Text: POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide PAGE STEP RECOVERY DIODES - STANDARD 12-42 - SURFACE MOUNT PLASTIC PACKAGES 12-43 SILICON MULTIPLIER VARACTORS 12-40 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.com
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Abstract: No abstract text available
Text: DATA SHEET SMV121x Series: Hyperabrupt Junction Tuning Varactors Applications • Low tuning voltage VCOs High-volume commercial systems Features High capacitance ratio: C1V/C4V = 5 typical Packages rated MSL1, 260 °C per JEDEC J-STD-020 Description
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SMV121x
J-STD-020
2000tside
200057H
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DH292
Abstract: No abstract text available
Text: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.
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DH294
DH200
DH270
DH110
DH293
DH252
DH256
DH292
DH267
M208b
DH292
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Si4114G-BM
Abstract: No abstract text available
Text: Si4114G RF S Y N T H E S I Z E R W I T H I N T E G R A T E D VCO S F O R D I R E C T C O N V E R S I O N GSM AND GPRS WIRELESS COMMUNICATIONS Features M -B G Integrated VCOs, loop filters, varactors, and resonators Minimal 2 external components required
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Si4114G
28-lead
Si4114G-BM
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Si4133-GT
Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
Text: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators
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Si4133
Si4123/22/13/12
24-pin
28-lead
Si4133-GT
SI4133-D-GM
Si4133-GM
si4133-d-gt
SI4112-D-GT
SI4122DG
Si4113
Si4122
Si4123
Si4133
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IMPATT
Abstract: No abstract text available
Text: RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally
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RA45200
MA45200
IMPATT
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diode ct12
Abstract: MA46583 MA46582 ma46580
Text: Beam Lead Constant Gamma GaAs Tuning Varactors MA46580 thru 589 Series V3.00 Features ● ● ● ● ● ● ● Case Style 992 Gamma of 1.0 and 1.25 Available Constant Gamma for Linear Tuning Strong Beam Construction Low Parasitic Capacitance High Q Close Capacitance Tracking
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MA46580
diode ct12
MA46583
MA46582
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Tuning Varactors
Abstract: varactors 406012
Text: 60-Volt Abrupt Tuning Varactors Description The MicroMetrics MTV 4060 series Tuning Varactors are silicon abrupt junction devices. They offer the highest Q and lowest resistance available in 60 volt tuning diodes. A unique silicon dioxide passivation process assures greater stability,
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60-Volt
as060-06
MTV4060-07
MTV4060-08
MTV4060-09
MTV4060-10
MTV4060-11
MTV4060-12
MTV4060-13
MTV4060-14
Tuning Varactors
varactors
406012
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SMV2019-108
Abstract: SMV1206-108 SMV1206 SMV1405 SMV2019
Text: DATA SHEET Silicon Tuning Varactors in Hermetic Surface Mount Package Applications V COs l V oltage tuned filters l Features l l l l l l l S ilicon abrupt and hyperabrupt devices available H ermetic ceramic package, 1.83 x 1.43 x 1.0 mm
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J-STD-020
SMV2019-108
SMV1206-108
SMV1206
SMV1405
SMV2019
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AF3 SOT23
Abstract: varactors SMV1247 SMV1247-074 SMV1247-079LF SMV1255 SMV1253-079LF
Text: DATA SHEET SMV1247-SMV1255 Series: Hyperabrupt Junction Tuning Varactors Applications x Low tuning voltage VCOs x High-volume commercial systems Features x High capacitance ratio: C0.3V/C4.7V = 12 typical x Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMV1247-SMV1255
J-STD-020
SMV1247
SMV1255
200061F
AF3 SOT23
varactors
SMV1247-074
SMV1247-079LF
SMV1253-079LF
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coaxial resonator, skyworks
Abstract: SMV2019 SMV2019-000 SMV2019-240 SMV2020-000 SMV2020-240 SMV2021-000 SMV2022-000 SMV2023 SMV2023-000
Text: data sheet SMV2019 to SMV2023: Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips Applications l Voltage controlled oscillators Features High Q for low loss resonators Low leakage current l High tuning ratio for wideband VCOs l SPICE model parameters
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SMV2019
SMV2023:
coaxial resonator, skyworks
SMV2019-000
SMV2019-240
SMV2020-000
SMV2020-240
SMV2021-000
SMV2022-000
SMV2023
SMV2023-000
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SMV1145-011LF
Abstract: SMV1145-079LF marking GU
Text: DATA SHEET SMV114x Series: Hyperabrupt Junction Tuning Varactors Applications x High volume commercial systems Features x Frequency linear design x Low series resistance x Packages rated MSL1, 260 °C per JEDEC J-STD-020 Skyworks offers lead Pb -free, RoHS (Restriction of
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SMV114x
J-STD-020
200132E
SMV1145-011LF
SMV1145-079LF
marking GU
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SMV1139
Abstract: S1672 SMV1129 SMV1129-079LF
Text: DATA SHEET SMV1129 and SMV1139 Hyperabrupt Junction Tuning Varactors Applications x Low phase noise VCOs x High-Q tuning elements in wireless system LOs Features x High-Q x Low series resistance for low phase noise x Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMV1129
SMV1139
J-STD-020
SMV1129-079LF
SMV1139-011LF
200132E
S1672
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MGV-100-20
Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
Text: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form
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MGV-075
MGV-100
MGV-125
MGV-100-20
MGV-125-20
MGV-125-22
MGV-125-25
MGV-100-21
MGV-075-10
MCE Metelics MGV-100-20
MGV-100-23
MA46471
MA46472
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vishay transistor databook
Abstract: No abstract text available
Text: VISHAY GENERAL SEMICONDUCTOR Rectifiers Application Note Physical Explanation GENERAL TERMINOLOGY Semiconductor diodes are used as rectifiers, switches, varactors and voltage stabilizers see Zener databook . Semiconductor diodes are two-terminal solid-state devices
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"Tuning Varactors"
Abstract: Tuning Varactors MA46600 MA46601-30 gunn MA46601 MA46602 MA46603 MA46604 MA46605
Text: GaAs Abrupt Tuning Varactors MA46600 Series V3.00 Features ● ● ● Case Styles Highest Q Large Capacitance Variation with Voltage Custom Tailored Designs Available on Request Description The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically
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MA46600
"Tuning Varactors"
Tuning Varactors
MA46601-30
gunn
MA46601
MA46602
MA46603
MA46604
MA46605
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MA4ST403
Abstract: MA4ST300 MA4ST400 MA4ST401 MA4ST401CK MA4ST401CK-T MA4ST402 MA4ST404 MA4ST405 MA4ST406
Text: Surface Mount Hyperabrupt Varactors MA4ST300 Series MA4ST400 Series Surface Mount Hyperabrupt Varactors Features • • • • • Surface Mount Packages High Quality Factor Capacitance Ratio to 9.5:1 Tape and Reel Packaging Available SPC Monitored Ion Implantation for Excellent
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MA4ST300
MA4ST400
OT-233
OT-23
MA4ST403
MA4ST401
MA4ST401CK
MA4ST401CK-T
MA4ST402
MA4ST404
MA4ST405
MA4ST406
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ci 740
Abstract: 1C45 DH744
Text: SILICON TUNING VARACTORS This series o f high Q epi-junction m icrow ave tuning varactors 45 V incorporates a passivated mesa tech n olog y. It is well suited for fre q u e n cy tuning a pp lica tio ns up to X band. CHIP AND PACKAGED DIODES CHIP OIODES TUNING RATIO
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74008
Abstract: 74067 74004 74016 74220 c 74067 cI 74150 74470 ci 74390 74006
Text: •'<% SILICON TUNING VARACTORS / This series o f high tuning ratio e pi-ju nctio n m icro w a ve tuning varactors 90 V incorporates a passivated mesa te ch n o lo g y. It is well suited for fre q u e n cy tuning a p p lica tio n s up to L b an d . CHIP AND
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Frequency Generator 1MHz
Abstract: step recovery diode New England Microwave NE12003
Text: 6563403 NEW ENGLAND MICROWAVE. . bh ' 66C 00087 DE | b S b 3 4 Q 3 0DD0DÛ7 I T ^ o n -iS 1 NÉW ÉNGLM1D MICROWWe CORPORATION 26 HAMPSHIRE DRIVE, HUDSON, NEW HAMPSHIRE 03051 603 883-2900 STEP RECOVERY AND MULTIPLIER DIODES NE12000 The NE12000 step recovery and multiplier diodes are epitaxial silicon varactors which achieve high
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5b3403
0D00DÃ
NE12000
NE12000
syn8-11
Frequency Generator 1MHz
step recovery diode
New England Microwave
NE12003
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VR1j
Abstract: SMV1200
Text: Varactor Diodes Hyperabrupt Varactors for General Wide Band Applications Single and Common Cathode Reverse Breakdown Voltage, V B (10 |aA): Reverse Leakage Current, lR (16V): 20V Minimum 50 nA Maximum r Part Number SMV1200-04 min max 10.5 12.5 Q VR1j
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SMV1200-04
SMV1200-104
SMV1200-07
SMV1200-107
SMV1204-04
SMV1204-104
SMV1204-05
SMV1204-105
SMV1202-03
SMV1202-08
VR1j
SMV1200
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Untitled
Abstract: No abstract text available
Text: M S I 3SE D ELECTRONICS INC n Sb5bMbb 00003=13 7 B i l S I STRIPLINE PACKAGED M - T - c n - l^ ABRUPT TUNING DIODES electron ics. In stripline packages, the MSI 1S3113A series high Q tuning varactors are single diodes and the 2C3113A series are back-to-baok diodes with
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1S3113A
2C3113A
S3-2/90
1S3113A-
1S3150A
2C3144A
C2/C30
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silicon epitaxial mesa diode
Abstract: construction of varactor diode Parametric Varactor diodes
Text: GEC PLES S EY S l M I t . O % I U C I O K S CT3501-1.2 TUNING VARACTORS - INTRODUCTION INTR O D U C TIO N Varactor tuning diodes are voltage variable capacitors, designed to provide electronic tuning of oscillators and filters. The device employs the variable depletion capacitance of a
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CT3501-1
13GHz
silicon epitaxial mesa diode
construction of varactor diode
Parametric Varactor diodes
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