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    Untitled

    Abstract: No abstract text available
    Text: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C 17103« FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules •Specifications guaranteed over full military temperature range -55° C to + 125“ C


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mil IMS1203M MIL-STD883C. 254mm

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


    OCR Scan     		PDF IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80

    A1t smd

    Abstract: IMS1203M sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold
    Text: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C ÏTüTIOS* D ESCR IPTIO N FE A TU R ES The IN M O S IM S 1203M is a high speed C M O S 4Kx1 static RAM processed in full compliance to MIL-STD883C . The IM S1203M provides performance enhance­


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mii MIL-STD-883C IMS1203M 254mm A1t smd sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold

    4kx1 static ram

    Abstract: MS1203 IMS1203A-25M IMS1203M IMS1203M-25 IMS1203M-2S IMS1203M-35 IMS1203M-45 1203M
    Text: IM S 1 2 0 3 M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1203M is a high speed CMOS 4Kx1 static RAM processed in full compliance to MIL-STD883C. The IMS1203M provides performance enhance­ ments with the additional CMOS benefits of lower power


    OCR Scan     		PDF IMS1203M MIL-STD-883C 18-Pin, 300-mil IMS1203M MIL-STD-883C. 1203S-25M IMS1203A-25M 4kx1 static ram MS1203 IMS1203A-25M IMS1203M-25 IMS1203M-2S IMS1203M-35 IMS1203M-45 1203M

    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


    OCR Scan     		PDF 32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420

    4kx1 static ram

    Abstract: MS-1203 S1203
    Text: „ I M : •■■■■■Si ■■■■ Mm OS* cmos High Performance 4K x 1 Static RAM MIL-STD-883C FEA TU R E S D E SCR IPTIO N • IN M O S' Very High Speed C M OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military


    OCR Scan     		PDF 18-Pin, 300-mil MIL-STD-883C 1203M IL-STD883C S1203M a203M 254mm 4kx1 static ram MS-1203 S1203

    Untitled

    Abstract: No abstract text available
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM mos FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 4 K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1203 300-mil IMS1203

    IMS1203M

    Abstract: IMS1203P-25 IMS1203P-35 IMS1203S-25 IMS1203P-45
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM m o s DESCRIPTION FEATURES INMOS' Very High Speed CMOS Advanced Process - 1.6 Micron Design Rules 4K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times Fully TTL Compatible


    OCR Scan     		PDF IMS1203 300-mil IMS1203 IMS1203M IMS1203P-25 IMS1203P-35 IMS1203S-25 IMS1203P-45

    Untitled

    Abstract: No abstract text available
    Text: IMS1203 CMOS High Performance 4K x 1 Static RAM irnos DESCRIPTION FEATURES INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 4K x 1 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45 nsec Chip Enable Access Times Fully TTL Compatible


    OCR Scan     		PDF IMS1203 300-mil IMS1203