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IN1206A Abstract: No abstract text available Text: 1N1199A R THRU 1N3673A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 12A Features 12Amp Rectifier 50-1000 Volts High Surge Capability Types up to 1000V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +200 Storage Temperature: -65 C to +200	Original	PDF	1N1199A 1N3673A 12Amp IN1199A IN1200A IN1202A IN1204A IN1206A IN3671A IN3673A
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	PDF	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
in1200A Abstract: IN4506 IN1206A IN1204A IN3671A IN3909 IN4507 IN1202 in1198a IN1202A Text: RICHARDSON/ SILICON DIODES N A T I O N A L EL LZE D • 773^17 0 0 D D 7Q 7 3m ■ NAT sir JE D E C TY P E IN1200A-1206A IN3670A-73A IN5331 IN3890-93 IN4510-11 IN3899 IN3903 N A T IO N A L T Y P E NO. IN1192A-98A IN3909-13 A25 I f m AV Max. average forward	OCR Scan	PDF	IN1200A-1206A IN3670A-73A IN5331 IN3890-93 IN4510-11 IN3899 IN3903 IN1192A-98A IN3909-13 IN3910 in1200A IN4506 IN1206A IN1204A IN3671A IN3909 IN4507 IN1202 in1198a IN1202A
TIC2260 Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184 Text: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500	OCR Scan	PDF	DDQD035 MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A TIC2260 C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
TIC2260 Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834 Text: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200	OCR Scan	PDF	MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A IN2154 TIC2260 t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
SD5115 Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15 Text: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3	OCR Scan	PDF	MR500 MR501 MR502 MR504 MR506 MR508 MR510 IN3491 IN3492 IN3493 SD5115 in1615 IN1202A IN5829 IN3495 IN3880 2N15
IN3492 Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90	OCR Scan	PDF	3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
TIC2260 Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495 Text: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406	OCR Scan	PDF	MR500 IN5400 IN1612 IN1341A MR750 IN1199A IN3208 IN248B IN1191A N2154 TIC2260 IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495