INFINEON 3GPP Search Results

infineon x-gold

Abstract: MIPI csi-2 x-gold eMMC X-GOLD613 MIPI CSI-2 Parallel MIPI csi ARM11 infineon gold arm1176 lpddr1
Contextual Info: Product Brief X-GOLD 613 TM 3G Low-Cost Solution for Mobile Internet Browsing & Messaging Main Features The Infineon X-GOLD 613 is a cellular System-on-Chip comprising of 2G/3G digital and analog baseband plus power management functionality, all monolithically integrated in 65nm CMOS technology. It is Infineon’s 3rd

Infineon X-GOLD 110

Abstract: Infineon X-GOLD 618 infineon x-gold xmm 6180 X-GOLD 618 MIPI CSI-2 Parallel X-GOLD 110 smarti UE MIPI csi-2 MIPI csi
Contextual Info: Product Brief X-GOLD 618 TM Cost efficient HSPA Baseband for Multimedia enabled Cellular Phones Main Features THE Infineon X-GOLD 618 is a cellular system on chip comprising the 2G/3G digital and analog baseband and the power management functions monolithically integrated in 65nm CMOS technology. It is Infineon’s 3rd

Contextual Info: PTFC270051M advance specification Confidential, Limited Internal Distribution Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications

H-49248H-4

Contextual Info: PTVA093002TC Description Advance Specifications describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact

Mpixel

Abstract: GPS gprs modem mobile phone GSM 900/1800
Contextual Info: Product Brief MP2 The multimedia platform MP2 is following Infineon’s successful strategy providing complete system solutions for high featured phones supporting all cellular standards from GSM/GPRS, EDGE and UMTS with one unified platform. The MP2 offering includes several platform

Infineon technology roadmap

Abstract: device mp4 player FDD service mp4 devices circuit MP4 Player circuit usb 3g modem circuit reference design using infineon
Contextual Info: Product Brief MP1 Multimedia Platform Infineon’s MP1 multimedia platform is one of the most versatile and complete system solutions available today. It allows customers to develop and market mobile phones in record time. Our customers receive everything needed

PTFB092707FH

Contextual Info: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance

Contextual Info: PTFC260362SC Thermally-Enhanced High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications

XPOSYS

Abstract: GPS TRACKER h935 Infineon XPOSYS XPOSYS chip gps architecture circuit diagram of Key finder wireless Key Finder E112 E911
Contextual Info: Product Brief XPOSYS TM Leading-Edge A-GPS true Single-Chip Receiver Key Features and Benefits Xposys is the eXcellent POsitioning SYStem that brings Infineon’s single-chip A-GPS family to the next level of integration, based on 65nm technology node. TM

Infineon X-GOLD 616

Abstract: XGOLD616 infineon x-gold tx 2G 3g modem ic X-GOLDTM616 "x-gold 616" infineon baseband processor MSC33 X-GOLD 616
Contextual Info: Product Brief X-GOLDTM616 High Performance Modem Solution for Smart Phones Main Features The Infineon X-GOLD 616 is a cellular system on chip comprising of the 2G/3G digital and analogue baseband plus the power management function all monolithically integrated in 65nm CMOS technology. It is

smarti

Abstract: Infineon SMARTi smarti 2 homodyne infineon pmb homodyne receiver pVQFN40
Contextual Info: Product Brief PMB 5699 SMARTi U Single-Chip W- C D M A / U MTS Tra nsce i ve r SMARTi U – First Single-Chip U M T S / W - C D M A R F -Tr a n s ce i v e r General • ■ Infineon has designed the first single-chip UMTS/ W-CDMA RF-transceiver IC SMARTi U to be used in mobile applications according 3GPP

gsm based speed control of dc motor

Abstract: M34283G2-XXXGP Infineon SMARTi 3g modem circuit GSM Modem USB mp3 fm mp3 fm modulator sd mmc usb smarti led based graphic equalizer ic Graphic Equalizer ic i2c control
Contextual Info: Product Brief PMB 8876 S-GOLD2 -Multimedia Engine with Advanced EDGE Modem Functionality S - G O L D 2 T M i s t h e l a t e s t m e m b e r of Infineon’s successful S-GOLD baseband family. It combines advanced EDGE modem technology with the latest multimedia functions required for

3G HSDPA circuits diagram

Abstract: array antenna 616 3g infineon pmb PMB 9600 infineon 3gpp Infineon Technologies Morphics "channel estimation"
Contextual Info: Product Brief 3G Basestation Processor 3GPP/UMTS Physical Channel Processing T h e 3 G b a s e s t a t i o n p r o c e s s o r is a single-chip, physical channel processing solution for 3GPP/UMTS Macro, Micro and Pico cell Node B applications. It provides up to 64 customer programmable

k 2679

Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
Contextual Info: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full

PMB 8878

Abstract: PMB8878 X-Gold 608 infineon X-GOLD SDR 20 mp3 fm modulator sd mmc usb infineon x-gold xgold 3.5G HSDPA infineon X-Gold 608 PMB 6950
Contextual Info: Product Brief Key Application Features PMB8878 X-GOLD 608-Broadband Mobile Experience with HSDPA 7.2 Mbit/s and Multimedia Engine  ARM 926 based single modem and application processor with cache support and fast tightly-coupled memories  Hardware Crypto box - DRM 2.0, SIM

PTFB211501E

Abstract: PTFB211501F R250 H-36248-2
Contextual Info: Preliminary PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETS designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include

infineon X-GOLD SDR 20

Abstract: infineon X-GOLD SDR 20 LTE X-GOLDTM lte RF Transceiver MIMO 2x2 X-GOLD infineon baseband processor 1176JZ 2x2 MIMO teaklite polar modulator
Contextual Info: Product Brief X-GOLD SDR 20 TM Programmable Baseband Processor for Multi-Standard Cell Phones Main Features To address the “multi-standard challenge” where an increasing number of cellular, connectivity, broadcast, and multimedia standards co-exist in a

ERA-H-30275-4-1-2304

Contextual Info: Preliminary PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description Features The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold Metallization ensures excellent device lifetime

PTFB213004

Abstract: PTFB213004F h-37275-8
Contextual Info: Preliminary PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

Contextual Info: Preliminary PTFA211001E PTFA211001F Thermally Enhanced High Power RF LDMOS FETs 100 W, 2110–2170 MHz Description Features The PTFA211001E and PTFA211001F are thermally enhanced an internally matched 100-watt GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging

PTF210301E

Contextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

PTF211301E

Contextual Info: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

GS 9425

Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Contextual Info: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

PMB 5703

Abstract: 5703 infineon smarti ue smarti 5703 transceiver UMTS PMB5703 UMTS DigRF Multiband RF Transceiver HSDPA UMTS transistor
Contextual Info: Product Brief PMB 5703 SMARTi UE – The worldwide first single-chip dual-mode RF Transceiver IC with integrated analog baseband functionality and 3G digRF standard interface S M A R T i U E is t h e first single-chip dual-mode UMTS / EDGE Transceiver IC with 3G DigRF V3.09 standard interface for multi-media and