INFINEON MARKING CODE E1 SOT23 Search Results

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

mmbt3904 complementary

Abstract: MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S SMBT3904U SMBT3906 infineon marking code B2 SOT23 S1A SOT23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

infineon marking code B2 SOT23

Abstract: marking code TS infineon marking code B1 SOT23 infineon marking code E1 sot23
Contextual Info: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U

transistor marking S2A

Abstract: SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

TRANSISTOR S2A

Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

infineon marking code E1 sot23

Abstract: mmbt3904 complementary SMBT3904U SMBT3906 MMBT3904 MMBT3906 SC74 SMBT3904 SMBT3904S infineon marking code B2 SOT23
Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

transistor marking s2a

Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package BCR523 BCR523U

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

Contextual Info: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

pin ic marking code 60

Abstract: AN077
Contextual Info: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

BCR183

Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

BCR148

Abstract: BCR148F BCR148L3 BCR148S BCR148T
Contextual Info: BCR148. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=47 kΩ, R2=47 kΩ • BCR148S / U: Two internally isolated transistors with good matching in one multichip package

BCR169

Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see

infineon marking code B2 SOT23

Abstract: BCR523 BCR523U BCW66 BCW66H SC74
Contextual Info: BCR523. NPN Silicon Digital Transistors • Switching circuit, inverter circuit, driver circuit • Built in bias resistor R1= 1 kΩ, R2= 10 kΩ • BCR523U: Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1)

BCR141S

Abstract: BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd
Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package

SOt323 marking code 6X

Abstract: BCR198 BCR198W
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

marking WHs

Contextual Info: BCR108. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =2.2 kΩ, R2 =47 kΩ • BCR108S: Two internally isolated transistors with good matching in one multichip package