INFINEON X-GOLD 1010 Search Results

TRANSISTOR tl131

Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include

TRANSISTOR tl131

Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear
Contextual Info: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include

RO6006

Abstract: TRANSISTOR c105 capacitor 6800 uf r812 R809 PTVA101K02EV 011022 1030-1090MHz SK101M100ST
Contextual Info: PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with

TDA 810 amplifier

Abstract: tda 2004 TDA5220 TDA 810 FUNCTION BLOCK DIAGRAM CS10 ISA434 ISA868 ISF434 TDA521X TDK5110
Contextual Info: P rel imin ar y S p ecif ica t ion , V 1 .1 , Oct o be r 20 0 4 l TDA 5220 ia ASK/ FS K Sin gle Co nve rsio n Re ceiver C on fi de nt Ver s i on 1 .1 W i re l e s s C o n t r o l Co mpo ne nts N e v e r s t o p t h i n k i n g . Edition 2004-10-08 Published by Infineon Technologies AG,

tl2272

Abstract: TL239 c104 TRANSISTOR MM380 tl241 445-1411-2-ND 3224W-202ECT-ND amplifier circuit diagram 20000 watt TL243 TRANSISTOR c104
Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

TDA 810 amplifier

Abstract: TDA 820 m 2 pin crystal oscillator 20mhZ 434M ceramic capacitor COG 100nF 0805 tda series ics PLL FSK DEMODULATOR AC INRUSH CURRENT LIMITER single pole single throw relay 434MHZ transmitter
Contextual Info: P rel imin ar y S p ecif ica t ion , V 1 .1 , Oct o be r 20 0 4 TDA 5220 ASK/ FS K Sin gle Co nve rsio n Re ceiver Ver s i on 1 .1 W i re l e s s C o n t r o l Co mpo ne nts N e v e r s t o p t h i n k i n g . Edition 2004-10-20 Published by Infineon Technologies AG,

C205

Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

PLL FSK DEMODULATOR

Abstract: TDA7200 4mhz smd crystal TDA7100 PTL2012-F15N0G
Contextual Info: D at a Sh ee t , V 1. 0 , Ma y 20 0 7 TDA7200 ASK/ FS K Sin gle Co nve rsio n Re ceiver Ver s i on 1 .0 W i re l e s s C o n t r o l Co mpo ne nts N e v e r s t o p t h i n k i n g . Edition 2007-05-02 Published by Infineon Technologies AG, Am Campeon 1-12,

20000w audio amplifier circuit diagram

Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
Contextual Info: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.

PC3200S-3033

Contextual Info: Data Sheet, Rev. 1.11, Dec. 2004 HYS64D64020HBDL–5–C HYS64D64020GBDL–5–C HYS64D64020HBDL–6–C HYS64D64020GBDL–6–C 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-12

pc2100u-20330-b1

Abstract: PC2100U-20330-A1 PC2100U infineon pc2100u-20330-b1 PC2100U-20220-B1 PC3200U-30330 PC2100U-20330-C2 PC2700U-25330-B0 PC3200U-30330-A0 PC3200U-30330-B0
Contextual Info: HYS[64/72]D[16x01/32x00/64x20][G/E]U-x-B Unbuffered DDR-I SDRAM-Modules 2.5V 184Pin Unbuffered DDR-I SDRAM Modules 128MByte, 256MByte & 512MByte Modules PC1600, PC2100, PC2700, PC3200 Data Sheet Revision 1.01 Feb. 2003 • 184Pin Unbuffered 8-Byte Dual-In-Line

DDR333

Abstract: DDR333B DDR400 DDR400B HYS64D32020GDL-6-B HYS64D64020GBDL HYS64D64020HBDL PC2700 PC3200 TFBGA 117-pin
Contextual Info: D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020HBDL–5–C HYS64D64020GBDL–5–C HYS64D64020HBDL–6–C HYS64D64020GBDL–6–C 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s N e v e r

pc2100u-20330-b1

Abstract: pc2100u-20220-b1 PC2100U-20330-A1 infineon pc2100u-20330-b1
Contextual Info: HYS[64/72]D[16x01/32x00/64x20][G/E]U-x-B Unbuffered DDR-I SDRAM-Modules 2.5V 184Pin Unbuffered DDR-I SDRAM Modules 128MByte, 256MByte & 512MByte Modules PC1600, PC2100, PC2700, PC3200 Data Sheet Revision 1.0 Jan. 2003 • 184Pin Unbuffered 8-Byte Dual-In-Line

pc2100u-20330-b1

Abstract: HYS64D32300GU-6-B pc2100u-20220-b1 infineon pc2100u-20330-b1 pc2100u MA 75 544 PC3200U 30330 PC3200U-30330-B0 HYS64D64320GU-6-B infineon hys64d32300gu-5-b
Contextual Info: D a t a S he et , V 1. 1, J u l y 2 00 3 HYS[64/72]D64x20GU-x-B HYS[64/72]D32x00[G/E]U-x-B HYS64D16301GU-x-B 1 8 4 - P i n U n b u f f er e d D u a l - I n- L i n e M e m o r y M o d u l es U D IM M DDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g .

RCAS 4150

Abstract: CA 5668 Transistor BC 1078 DDR400 HYS72D32300GBR PC2700 ddr333 pc2700
Contextual Info: D a t a S h e e t , R e v . 1 . 1 , A p r . 2 00 4 HYS72D32300GBR–[5/ 6/7]–B HYS72D643[ 00/ 20] GBR–[ 5/6/7] –B HYS72D128320GBR–[5/6/ 7]–B 184 - Pi n Regist ered Doubl e Data Rat e SDRAM Modules Reg DIMM DDR SDRAM M e m or y P r o du c t s N e v e r

pc2700u-25330

Abstract: pc3200u-30331 GU5B
Contextual Info: Data Sheet, Rev. 1.2, May 2005 HYS64D32301[G/H]U–5–B HYS[64/72]D64xxx[G/H]U–[5/6]–B HYS[64/72]D128xxx[G/H]U–[5/6]–B 184-Pin Unbuffered D oublel-Data-Rate Memory Modules UDIMM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-05

pc2700s-25330

Abstract: A1626 DDR333B DDR400B HYS64D32020 HYS64D32020GDL PC2700 PC3200
Contextual Info: D a t a S he et , R e v . 1 . 2 , M a r . 2 00 5 HYS64D32020[H/G]DL–5–C HYS64D[32/16]0x0[H/G]DL–6–C 200-Pi n Small Out line Dual-I n-Line Memory Modules SO-DI MM DDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2005-03

Contextual Info: Data Sheet, Rev. 1.3, Jan. 2006 HYS64D32020[H/G]DL–5–C HYS64D[32/16]0x0[H/G]DL–6–C 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products Edition 2006-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

Contextual Info: SG647FBD64843UUD5 April 27, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG647FBD64843IAD5 64Mx72 512MB , DDR2, 240-pin Fully Buffered DIMM, ECC, 64Mx8 Based, PC2-4200, DDR2-533-444, 30.35mm, Green Module (RoHS Compliant). Label:

Contextual Info: SG647FBD64852UUD5 April 24, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG647FBD64852IAD5 64Mx72 512MB , DDR2, 240-pin Fully Buffered DIMM, ECC, 64Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). Label:

Pan1321

Abstract: PMB8753 T8753 Infineon Specific HCI Commands bluetooth bluemoon T8753-2 DS-1321-2400-103-V0 2-XV10T1 infineon spp at commands CLK32
Contextual Info: Preliminary Product Overview D S- 13 21-2400-1 03-V0.9 July 2008 ENW89811x4CF Bluetooth QD ID: Published after Qualification PAN1321-SPP I nfine o n ’ s BlueMoonUniversal Platform Wireless Modules  Edition 2008-07-07 Published by Panasonic Electronic Devices Europe GmbH,

KTY 110

Abstract: KTY temperature sensor KTY 15-6 pt 100 temperature sensor pt 1000 temperature sensor PT 2000 temperature sensor sensor 3820 Silicon temperature sensors t 3866 transistor 3866
Contextual Info: Silicon Temperature Sensors 4 Silicon Temperature Sensors 4.1 Introduction The KTY temperature sensor developed by Infineon Technologies is based on the principle of the Spreading Resistance. The expression “Spreading Resistance” derives from a method, called the “one-pointmethod” Figure 19 used to measure the specific resistivity of semiconductor wafers.

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

INFINEON trace code label

Contextual Info: SG5127FBD225643CRT October 18, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5127FBD225643CRT 512Mx72 4GB , DDR2, 240-pin Fully Buffered DIMM, ECC, CoolFlex, 256Mx4 Based, PC2-4200, DDR2533-444, 30.50mm, Green Module (RoHS Compliant).