TMM4 Search Results

Contextual Info: [TOSHIBA MOS MEMORY PRODUCTS TM M 4I6 P -2, TMM4 I 6 P -4 16384 WORD x 1 BIT D YNA M IC RAM N C H A N N E L S I L IC O N G A T E M O S TM M 4I6P -3, DESCRIPTION Tne T M M 4 16P -^ :o m is a 1 6 ,3 8 4 w o rd s b y access m e m o ry c ir c u it hig h speed and lo w p o w e r d is s ip a tio n .

minimelf marking

Abstract: TMM4567A bo 139 TMM4565 TMM4566 TMM4566A TMM4567 TMM4568 TMM4568A TMM4569
Contextual Info: SbE I • 7 '5 2 S 2 3 7 SCS-THOMSON OD4 1 b lO 111 « S 6 TH TMM4565, A ^TM M 4569, A TMM4575, A ^TM M 4579, A IL E O T « ! G S-THONSON T - /h O *f TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE ABSOLUTE RATINGS limiting values Symbol P aram eter Pt o t

41256p

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM4 1 1 0OOC-10 TMM4 1 10OOC-12 1 ,0 48 ,5 7 6 WORD 1 BIT DYNAMIC RAM X SILICON MO NO LITHIC N-CHANNEL SILICON GATE MOS PRELIMINARY DESCRIPTION The T M M 4 1 1 0 0 0 C is th e n ew g e n e ra tio n d y n a m ic RAM organized 1 , 0 4 8 , 5 7 6 w o rd s by 1 bit,

TMM4164AP-20

Abstract: 4164AP-15 4164-A 4164A TMM41 4164AP
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 6 5 ,5 3 6 WORD X TMM4164AP-12, TMM4164AP-15 TMM41 64AP"20 1 BIT DYNAM IC RAM N CHANNEL SILICON GATE MOS DESCRIPTION M u ltip le x e d address in p u ts p e rm it th e T M M 4 1 6 4 A P to be packaged in a sta n d a rd 16 p in p la s tic D IP . T h is

ic 4565

Abstract: Diodes Marking 64 minimelf marking m4567 4565 D 4568a 4565A 4569
Contextual Info: rz7 scs-moMsoN ^ 7# TMM4565, A ^ T M M 4569, A TMM4575, A ^ T M M 4579, A RÆO É»[IL[i(OT(ôMÛS TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE ABSOLUTE RATINGS (limiting values Symbol Param eter Ptot Power Dissipation T*stg T| Storage and Junction Temperature Range

TMM41256P

Abstract: tmm41256 TMM411000C-10 TMM411000C-12 TMM41 aaag
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM4110OOC-10 TMM411000C-12 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N N E L S IL IC O N G A TE M O S PR ELIM IN A R Y D E S C R IP TIO N The T M M 4 1 1 0 0 0 C is th e new g e n e ra tio n

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM411001C-10 TMM411001C-12 1 ,0 48 ,5 7 6 WORD X 1 BIT DYNAMIC RAM SILICO N MONOLITHIC N -C H A N N EL SILICO N GATE MOS PRELIMINARY DESCRIPTION bit densities and is co m p a tib le w ith w id e ly available a u to m ated te stin g and inse rtio n e q u ip m e n t. System

kb30

Contextual Info: MMinyjibCHbm MOflyjiflTOPHbm tpm o a rMM-46B TRIODE HMny/lbCHblii MOflyjlflTOpHblM TpMOfl l"MM-46B n p e f lH a 3 H a n e H ,qrm KO M M yTa- uy\v\ iiM n y /ib C H O M m o u ^ h o ctm b M M n y rib C Hbix MOfly/iflTopax paflMOTexHunecKOM annapaTypbi. OBLIQUE C B E flE H M fl

8088 assembly language manual

Abstract: 8086 assembly language reference manual ptz decoder architecture of pentium microprocessor intel Programmers Reference Manual 243007 intel 8086 newton raphson power flow model isa bus interfacing with microprocessor 8088 IA-32 Intel Architecture Software Developers Manual
Contextual Info: Intel Architecture Optimization Reference Manual Copyright 1998, 1999 Intel Corporation All Rights Reserved Issued in U.S.A. Order Number: 245127-001 Intel® Architecture Optimization Reference Manual Order Number: 730795-001 Revision Revision History

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

pentium4 instruction set

Abstract: AOS 3401 intel batch MARKING sl 100 dataset intel pentium mmx architecture of pentium microprocessor INTEL application notes Intel Pentium 4 Processor instruction set ptz decoder MKL series
Contextual Info: Intel Pentium® 4 and Intel® Xeon Processor Optimization Reference Manual Copyright 1999-2001 Intel Corporation All Rights Reserved Issued in U.S.A. Order Number: 248966-04 World Wide Web: http://developer.intel.com Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

CW 7805

Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
Contextual Info: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

BCP56

Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Contextual Info: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

200B

Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Contextual Info: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from

ssy 1920

Abstract: LM 2931 AT 05 BCP56 LM7805 PTFA191001E PTFA191001F
Contextual Info: PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA,

LM7805

Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
Contextual Info: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the

tc511000

Abstract: tda 3611 d0251 TC8832F D025137 2pcs01 OVR BT2 A23 1101-01 csb655 TC8832
Contextual Info: TC8832F-1 •i TO SHI BA 1. G 0 2 5 1 3 3 143 m j O S 3 UC/UP b4E T> GENERAL T h e T C 8 8 3 2 F is a sin g le chip C M O S L S I for voice recording / play-back u sin g the A D M ( A d ap tive D elta M o d u latio n ). I t com poses a voice recording sy stem w ith a d yn am ic R A M for voice m em ory and

Contextual Info: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in

C205

Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,

elna 50v

Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000