INFRARED PHOTOTRANSISTOR Search Results

PHOTOTRANSISTOR 3 PIN

Abstract: 817 photo coupler DIODE m1 LED phototransistor IC PACKAGE led phototransistor 3 pin ir receiver smd diode 2 pin 3 pin phototransistor phototransistor blue light lens photodiode phototransistor phototransistor, 850nm
Contextual Info: INFRARED SERIES PART NO. SYSTEM z INFRARED EMITTING DIODE z PHOTOTRANSISTORS z PHOTODIODE LAMP CATEGORY LED PRODUCT PACKAGE TYPE LENS APPEARANCE B - xxx - SPECIAL DEVICE SERIES IDENTIFICATION CHIP LEAD TYPE LAMP CATEGORY: CHIP: IR : Infrared Emitting Diode

ltw-m140

Abstract: LTW-193ZDS5 piranha led 0.5w LTOE-15D11 ltst-c235kgkrkt LTW-C282DS5 LTST-T670TBL LTST-S326 LTST-C281KRKT LTR-301 002
Contextual Info: 002 003 Alphanumerical Index 012 Application Showcase 021 Quality & Reliability Product SMD LED 022 Low Power SIR 115Kb/s Infrared Transceiver Standard and Low Power FIR 4Mb/s Infrared Transceiver SIR 115kb/s Infrared + Remote Control Transceiver FIR 4Mb/s Infrared + Remote Control Transceiver

TLN203

Abstract: TPS613
Contextual Info: TO SH IBA TLN203 TOSHIBA INFRARED LED G aA M s INFRARED EMITTER TLN203 INFRARED LED FOR PHOTOSENSORS Unit : mm OPTO-ELECTRONIC SWITCHES TAPE AND CARD READERS ROTARY ENCODERS FDD FLOPPY DISK DRIVE DETECTION • High radiant intensity • Ideal for use in combination with TPS613 phototransistor

e26a

Abstract: E148-5V E149-12V E149-5V E150-5V E151-12V E151-5V E25A E304-12V E304-5V
Contextual Info: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue

E150-5V

Abstract: infrared 660nm* 20mw E151 E148-5V E149-12V E149-5V E151-12V E151-5V E304-12V E304-5V
Contextual Info: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue

OSI photo detector

Abstract: 1N6266
Contextual Info: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940

TRANSISTOR SMD MARKING CODE 3401

Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
Contextual Info: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com

PHOTOTRANSISTOR 3 PIN

Abstract: rIP 31 TRANSISTOR led phototransistor 3 pin Infrared phototransistor TO18 3 pin phototransistor IR LED infrared led Transistor AC 51 Photosensors Optoisolators "Photo Interrupter" dual transistor
Contextual Info: OPTOELECTRONICS D e s c rip tio n TABLE OF CONTENTS Page D e s c rip tio n Page How To Use This Catalog 2 INFRARED IR COMPONENTS Part Number Index 3 How To Use The Infrared (IR) Section 31 Infrared (IR) Specification Definitions 32 Plastic Infrared Liqht Emittinq Diodes

infrared diode

Abstract: TRANSISTOR C 2577 GL4800E0000F Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT infrared infrared transistor GL527V INFRARED DIODES
Contextual Info: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 3 – Use of Infrared Emitting Diodes 3-1 Chapter 3 – Use of Infrared Emitting Diodes 3-2 Chapter 3 – Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 – Use of Infrared Emitting Diodes

TLN10

Abstract: TLN103A TPS603A
Contextual Info: TO SH IBA TLN103A TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 03A Unit : mm INFRARED LED FOR PHOTOSENSORS OPTO-ELECTRONIC SWITCHES SELECTORS TAPE AND CARD READERS EQUIPMENT USING INFRARED TRANSMISSION • Wide half-angle value : Q\ = ±80° typ. • Excellent radiant-intensity linearity. Modulation by pulse

"Infrared LED"

Abstract: infrared led phototransistor 3F Infrared photosensor
Contextual Info: Sensors Coding of Product Names Coding of Product Names • Infrared LED s s I R 3 4 1 S 3 F T T El Number Output type Series name SIR Lens-type infrared LED SIM Molded-type infrared LED Package color Infrared LED T I Transparent Terminal type 3F I Straight

Contextual Info: Fairchild Semiconductor - Optoelectronics, Infrared lamps, application notes Advanced Search Home >> Find products >> Optoelectronics >> Optoelectronics Infrared Product Notes Related Links Infrared product tree Contents Product number system: Plastic Emitters and Photosensors | Sidelooker product color codes | Frequently

SFH2030

Abstract: IR DETECTOR 940nm fairchild sfh2030 equivalent H23ltb SFH2030 application fairchild nomenclature H23A1 phototransistor sensitive to red light photosensors L14Q1
Contextual Info: Fairchild Semiconductor - Optoelectronics, Infrared lamps, application notes Advanced Search Home >> Find products >> Optoelectronics >> Optoelectronics Infrared Product Notes Related Links Infrared product tree Contents Product number system: Plastic Emitters and Photosensors | Sidelooker product color codes | Frequently

APTD3216SF4C

Abstract: infrared transistor APTD3216
Contextual Info: 3.2x1.6mm INFRARED EMITTING DIODE Part Number: APTD3216SF4C Features Description z3.2mmx1.6mm SMT LED,1.8mm THICKNESS. zMECHANICALLY AND SPECTRALLY MATCHED TO SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. APTD3216 PHOTOTRANSISTOR zWATER

Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: APT1608SF4C-PRV Features Description z1.6mmX0.8mm SMT LED, 0.75mm thickness. SF4 Made with Gallium Aluminum Arsenide Infrared Emitting zMechanically and spectrally matched to phototransistor. diodes. zPackage: 2000pcs / reel .

Contextual Info: INFRARED EMITTING DIODE Part Number: KM2520F3C03 Description Features F3 Made with Gallium Arsenide Infrared Emitting diodes. Subminiature package. Mechanically and spectrally matched to the phototransistor. Gull wing lead. Long life - solid state reliability.

Contextual Info: 2.0x1.25mm INFRARED EMITTING DIODE Part Number: KP-2012F3C Features Description 2.0mmx1.25mm SMT LED,1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. Mechanically and spectrally matched to the phototransistor. Package: 2000pcs / reel.

Photodiodes

Abstract: Phototransistors Infrared LED 940nm i r led 940nm
Contextual Info: INFRARED S E R I E S SELECTION GUIDE PART NO. SYSTEM • INFRARED EMITTIMG DIODES : • PHOTODIODES : LAMP CATEGORY • PHOTOTRANSISTORS : • PHOTOREFLECTORS : | pSIl LIGHT SOURCE | |- LENS APPEARANCE I 1 ^ 1 ^ [T"|

Contextual Info: 1.6X0.8mm INFRARED EMITTING DIODE Part Number: KP-1608F3C Features Description 1.6mmX0.8mm SMT LED, 1.1mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. Mechanically and spectrally matched to the phototransistor. Package: 2000pcs / reel.

Contextual Info: Technical Data Sheet Top Infrared LED IR67-21C Features ․Compatible with infrared and vapor phase reflow solder process. ․Low forward voltage. ․View angle 120° ․Pb free Descriptions ․IR67-21C is an infrared emitting diode in miniature SMD package

CNY47A

Abstract: CNY47 CNY47/47A
Contextual Info: European “Pro Electron’VRegistered Types _ CNY47, CNY47A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he CNY47 and CNY47A are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a

APT1608F3C

Contextual Info: 1.6x0.8mm INFRARED EMITTING DIODE Part Number: APT1608F3C Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to phototransistor. z Package: 2000pcs / reel .

APECVA3010F3C

Contextual Info: 3.0x1.0 mm INFRARED EMITTING DIODE PRELIMINARY SPEC Part Number: APECVA3010F3C Features Description z 3.0mmx1.0mm SMT LED, 2.0mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to the phototransistor.

Contextual Info: 1.6X0.8mm INFRARED EMITTING DIODE Part Number: APT1608F3C Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. F3 Made with Gallium Arsenide Infrared Emitting diodes. z Mechanically and spectrally matched to phototransistor. z Package: 2000pcs / reel .