INTERNATIONAL RECTIFIER 713 Search Results

HFA16TB60

Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Contextual Info: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)

86CNQ200

Contextual Info: bSE 1> INTERNATIONAL RECTIFIER 4Ö5545B QGl?bT 3?b PD-2.348 International e !Rectifier 86CNQ200 SCHOTTKY RECTIFIER 80 Amp Major Ratings and Characteristics Characteristics Description/Features 86CNQ200 Units The 86CNQ200, center tap Schottky rectifier module has

E2733

Abstract: E2715
Contextual Info: INTERNATIONAL RECTIFIER SbE D m MfiSS45E 0010b47 fi B Selection Guide E1007F INTERNATIONAL RECTIFIER \ ïA> ENCAPSULATED BRIDGE RECTIFIERS INTERNATIONAL RECTIFIER EN C AP SU LA TED B R ID G E EbE D • 4B 55 4S 2 a010b4fi T ■ R E C T IF IE R S _

Contextual Info: INTERNATIONAL RECTIFIER bSE D • MÔSSHSE QQ177bl Q6S * I N F PD-2.343 International [Ior| Rectifier mbr4045pt SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Characteristics Description/Features MBR4045PT Units lF AV Rectangular waveform 40

10MF

Abstract: 10MF2 10MF2TR
Contextual Info: bSE D • MASSES? 00177Q3 MÔ3 H I N R Data Sheet No. PD-2.212 INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER llO R l 10MFS 1 Amp Surface Mount Ultra Fast Recovery Rectifier Major Ratings and Characteristics Description/Features Units 'o 1.0 A @ Max.

105 08049

Contextual Info: □BE D I 4 £155452 GGDflDMM 1 02E 08044 D 7 * - &3 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.128 I«R INTERNATIONAL RECTIFIER R38BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.25//S 555 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES VOLTAGE RATINGS

Contextual Info: PD-9.1000 International j»g Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: Provisional Data Sheet No. PD-9.1401 International Rectifier IRHY9230CM JANSR2N7383 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

IR 50RIA120

Abstract: 50RIA5 HALF WAVE RECTIFIER CIRCUITS high speed FULL WAVE RECTIFIER CIRCUITS with scr A14U T30 rectifier 50RIA120 50RIA60 SCR 50RIA20 50RIA20
Contextual Info: INTERNATIONAL RECTIFIER 4ÖSS4S2 0G13M53 bT7 • INR STE D OCT 0 3 1990 Data Sheet No. PD-3.062B INTERNATIONAL RECTIFIER 50RIA SERIES 8 0 Amp RMS SCRs Description/Features Major Ratings and Characteristics This series of medium power thyristors is intended for

IR2113 APPLICATION NOTE

Abstract: IR2113 16 pin
Contextual Info: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side

Contextual Info: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

ir21xx

Abstract: IR2125 kira 1N4107 1N4110
Contextual Info: International Hü] Rectifier D e sig n T ips DT 94-1A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 KEEPING THE BOOTSTRAP CAPACITOR CHARGED IN BUCK CONVERTERS By Laszlo Kiraly

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MÖ55452 DG177SS flôl ■ INR PD-2.342 International B Rectifier HEXFRED Provisional Data Sheet HFA16TA60C u l t r a f a s t , s o f t RECOVERY DIODE 600V, 16A Major Ratings and Characteristics per Leg Characteristics

117 ajg

Abstract: 50WF10 50WF10F 50WF20 027B 50WF20F SS452
Contextual Info: INTERNATIONAL RECTIFIER bSE D • HflSSHSS □ G 1 7 b cìS Sfl7 HIINR Data Sheet No. PD-2.205 INTERNATIONAL. RECTIFIER IO R 50W F, 50W F-F SERIES 5 Amp Ultra Fast Recovery Rectifiers Description Major Ratings and Characteristics Characteristic 50WF, 50WF-F Units

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V

ci ir2110

Abstract: IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F
Contextual Info: International Hü] Rectifier D e sig n T ips DT 92-3B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 USING STANDARD CONTROL IC'S TO GENERATE NEGATIVE GATE BIAS FOR MOSFETS AND IGBTS

saa 7321

Contextual Info: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail­

pj 68 SMD diode

Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
Contextual Info: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer

transistors H128

Contextual Info: Data Sheet No. PD-9.653A INTERNATIONAL RECTIFIER l l O R I AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS ;n N-CHANNEL IRHF7130 IRHFS13Q SN7S61 JANSRSN7S61 JANSH2N7S61 MEGA RAD HARD 100 Volt, 0.181], MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

IRF734

Abstract: B49A L1029 IRF1010
Contextual Info: PD-9.999 International S Rectifier IRF734 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V R DS on = 1 lD = 4.9A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: MASS4S2 0015232 International la g Rectifier PD-9.842 IRFI9Z34G INTERNATIONAL RECTIFIER HEXFET P ow er M O S FE T • • • • • • • 5 m INR Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature

IRF744

Abstract: application irf744 100-C IRF1010 Q-36
Contextual Info: PD-9.1000 International S Rectifier IRF744 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 450V ^DS on = 0 . 6 3 0 lD = 8.8A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: International US Rectifier Provisional Data Sheet No. FD 9.1273A IRHY7230CM IRHY8230CM HEXFET TRANSISTOR N-CHANNEL JAN5R2N7381 JANSH2N7381 R E F : M IL - S - 1 9 5 0 0 / 6 1 4 M EGA RAD HARD 200Volt, 0.4QQ, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs

pj 69 diode

Abstract: FL014 RVM SOT223 FL014 Example mosfet SOT-223 marking code IOR b41 sot223 Ir314 pj 66 diode ON52 AN-994
Contextual Info: International S Rectifier PD 9.1298 IRLL1905 PRELIMINARY HEXFET Power MOSFET • • • • • Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling V dss = 55V f^DS on = 0.30Q Id = 1.6A D escription Fourth Generation HEXFETs from International Rectifier utilize advanced