IPI200N25N3 Search Results

IPI200N25N3 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPI200N25N3 G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 250.0 V; R_{DS (on)} (max) (@10V): 20.0 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 64.0 A;	Original	PDF	428.51KB	11
IPI200N25N3GAKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 64A TO262-3	Original	PDF	697.42KB

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Infineon Technologies AG IPI200N25N3GAKSA1 MOSFET N-CH 250V 64A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI200N25N3GAKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IPI200N25N3GAKSA1		15,450		67	1 - 10 - 100 $5.35 1000 $4.79 10000 $4.51	Buy Now
Rochester Electronics	IPI200N25N3GAKSA1		15,450		1	1 - 10 - 100 $4.28 1000 $3.83 10000 $3.61	Buy Now
TME	IPI200N25N3GAKSA1				1	1 $6.32 10 $4.37 100 $3.80 1000 $3.80 10000 $3.80	Get Quote
Rochester Electronics LLC IPI200N25N3GAKSA1 MOSFET N-CH 250V 64A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI200N25N3GAKSA1	Bulk			64	1 - 10 - 100 $4.69 1000 $4.69 10000 $4.69	Buy Now

IPI200N25N3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
200N25N Abstract: IEC61249-2-21 IPP200N25N3 JESD22 PG-TO220-3 IPB200N25N3 Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N IEC61249-2-21 JESD22 PG-TO220-3	PDF
200N25N Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 200N25N PG-TO220-3 200N25N	PDF
200N25N Abstract: IPB200N25N3 IPP200N25N3 IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 20 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N	PDF
IPP200N25N3 Abstract: 200N25N Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G $ '#$%TM3 Power-Transistor Product Summary Features 9 # (!,% ,-0+ !% 4% 9 6# % % ,2'!2% # (!0'% 6 R DS(on product (FOM) VDS 250 V RDS(on),max 20 m# ID 64 A 9 % 07-5 -, 0% 1)12!,# % R DS(on) 9 8 -. % 0!2),' 2% + . % 0!23 0%	Original	IPB200N25N3 IPP200N25N3 IPI200N25N3 PG-TO263-3 PG-TO220-3 PG-TO262-3 200N25N	PDF
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 20 mW ID 64 A • 175 °C operating temperature	Original	IPB200N25N3 IPP200N25N3 IPI200N25N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original		PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J	PDF
TLE4957C Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970 Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!	Original		PDF