IR 240 FET Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ir TMOS FET Transistor N -Channel — Enhancement VN2406L 3 DRAIN Motorola P rotor ed Device GATE TMOS MAXIMUM RATINGS Rating D rain -S ou rce Voltage 1 SOURCE Symbol Value Unit Vdc VDSS 240 D ra in -G a te Voltage V d GR

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

IRL3103

Abstract: IRL3103D1
Contextual Info: PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS on = 0.014Ω

IRL3103

Abstract: IRL3103D1
Contextual Info: PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS on = 0.014Ω

G3VM-401A

Abstract: G3VM-61G1 G3VM-41LR G3VM-21LR11 355CR g3vm-401d RB070M-30 TR G3VM-S5 G3VM-21GR G3VM-21LR
Contextual Info: MOS FET Relays G3VM Series Wide Range of Contact Forms, Sizes and Package Types • Controls load voltages up to 600 V. • Terminal packages include PCB through-hole, SMT gullwing, SOP, and SSOP. • Low ON-resistance, low output capacitance, current limiting, and high dielectric 5000 VAC models available.

lifo stack

Abstract: ScansUX1003
Contextual Info: 4708/4708B MICROPROGRAM SEQUENCER FAIRCHILD CMOS M A C R O LO G IC DESCRIPTION - The 4708 Microprogram Sequencer controls the order in which microinstructions are fetched from the control m em ­ ory. It contains a 10-bit program counter, a 4-level last-in first-out

IR5040

Abstract: induction heating Circuit
Contextual Info: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

induction heating Circuit

Contextual Info: MOSFET MODULE PD7M441L / PD7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET MODULE PD7M441L / PD7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

RB070M-30 TR

Contextual Info: MOS FET Relays G3VM Series Wide Range of Contact Forms, Sizes and Package Types • Controls load voltages up to 600 V. • Terminal packages include PCB through-hole, SMT gullwing, SOP, and SSOP. • Low ON-resistance, low output capacitance, current limiting, and high dielectric 5000 VAC models available.

G3VM

Abstract: G3VM-41LR3 G3VM-41LR G3VM-61CR G3VM-61G1 G3VM-21GR G3VM-21GR1 G3VM-21LR 353d G3VM-22FO
Contextual Info: MOS FET Relays G3VM Series Wide Range of Contact Forms, Sizes and Package Types • Controls load voltages up to 600 V. • Terminal packages include PCB through-hole, SMT gullwing, SOP, and SSOP. • Low ON-resistance, low output capacitance, current limiting, and high dielectric 5000 VAC models available.

f240l

Contextual Info: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES RA30H2127M Silicon MOS FET Power Amplifier, 210-270MHz 30W MOBILE RADIO MAXIMUM RATINGS SYMBOL V dd V gg Pin Po Tc OP Tstg (Tc=25deg.C UNLESS OTHERWISE NOTED)

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

Contextual Info: MOSFET MODULE P2H7M441H / P2H7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

10S080

Abstract: nc1602 441H PD7M440H PD7M441H IR 440H
Contextual Info: MOSFET MODULE PD7M441H / PD7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

IR 440H

Contextual Info: MOSFET MODULE P2H7M441H / P2H7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

Contextual Info: MOSFET MODULE PD7M441H / PD7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

a2211

Contextual Info: 2 S K 1 5 4 -0 1 L FUJI POWER MOS-FET . S N-;HANNEL SILICON POWER MOS-FET _ „ - F-II SERIES • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage

Contextual Info: bOE D • ^70576 Ü Q G7 7T 1 Û1S ■ IZETB ZETEX S E M I C O N D U C T O R S N-channel enhancement­ mode vertical DMOS FET Z V N 0124 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

G3VM-401B

Abstract: G3VM-401E G3VM-4N
Contextual Info: MOS FET Relays G3VM-401B/E New Series of Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation • Switches minute analog signals. • Leakage current of 1 mA max. when output relay is open. • Upgraded G3VM-4N Series.

G3VM-401BY

Abstract: G3VM-401EY
Contextual Info: MOS FET Relays G3VM-401BY/EY Analog-switching MOS FET Relays with Dielectric Strength of 5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Leakage current of 1 µA max. when output relay is open. RoHS compliant ! Refer to “Common Precautions”.

A240D

Abstract: G3VM-401BY G3VM-401EY 401by
Contextual Info: MOS FET Relays G3VM-401BY/EY Analog-switching MOS FET Relay with Dielectric Strength of 5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Leakage current of 1 mA max. when output relay is open. • Application Examples • Electronic automatic exchange systems

3 phase inverter 180 degree conduction mode wave

Abstract: fx4054 FX4053 NMHR ETD49 12v 2K3906 h bridge irf740 inverter using irfz44 12v center tap transformer fx4054 core
Contextual Info: APPLICATION NOTE 960A A 250 Watt Current-Controlled SMPS With Synchronous Rectification H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs by Ft. Pearce, D. Grant Introduction This application note illustrates ways in w hich In te rn a tio n a l R ectifier’s