IR 30 D1 DIODE Search Results

IR 30 D1

Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
Contextual Info: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)

IR 30 D1

Abstract: BAX17 FDH444 1N625 1N626 1N627 1N628 1N629 1N658 1N659
Contextual Info: NATL SEMICOND DISCRETE H E D | High Voltage Diodes Glass Package D evice No. P ackage No. Vrrm V Min 1N625 DO-35 30 1N626 DO-35 50 1N627 DO-35 100 1N628 DO-35 150 1N629 DO-35 200 1N658 DO-35 120 1N659 DO-35 60 1N660 DO-35 120 1N661 DO-35 240 Ir nA Max 1000

IR 30 D1

Contextual Info: 2SK1609 Switching Diodes MA153, MA153A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Series connection in package 1 0.95 ● +0.2 Small capacity between pins, Ct

IR 30 D1

Abstract: MA3X153 MA3X153A 133D1
Contextual Info: Switching Diodes MA3X153, MA3X153A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Small terminal capacitance, Ct • Two diodes are connected in series in the package 1.5 0.95 + 0.2 2.9 − 0.05 • Features

MA156

Contextual Info: 2SK963 Switching Diodes MA156 Silicon epitaxial planer type Unit : mm For switching circuits 6.9±0.1 1.5 board 1.0 0.85 4.5±0.1 4.1±0.2 fixed in a self-standing pattern after insertion in the printed-circuit 2.4±0.2 2.0±0.2 3.5±0.1 M type package for automatic and manual insertion, which can be

MA153

Abstract: MA153A MA3X153 MA3X153A
Contextual Info: Switching Diodes MA3X153 MA153 , MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 0.4±0.2 2 1 (0.65) • Small terminal capacitance Ct

D2 Package

Abstract: diodes ir MA153 MA153A MA3X153 MA3X153A
Contextual Info: Switching Diodes MA3X153 MA153 , MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 0.4±0.2 2 1 (0.65) • Small terminal capacitance Ct

IR diode D4

Abstract: diode TA 20-08 IR 30 D1
Contextual Info: SEMICONDUCTOR KDS127U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package B B1 6 2 5 3 4 C A A1

Contextual Info: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B C 6 2 5 3 4 D A 1 A1 FEATURES ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance ・Ultra- Small Surface Mount Package

IR diode D4

Contextual Info: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Low Forward Voltage C A 1 6 2 5 3 4 A1 Small Total Capacitance C Fast Reverse Recovery Time D Ultra- Small Surface Mount Package MAXIMUM RATING Ta=25

KDS127U

Contextual Info: SEMICONDUCTOR KDS127U TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES B B1 Low Forward Voltage Fast Reverse Recovery Time 1 6 2 5 3 4 A D CHARACTERISTIC SYMBOL RATING UNIT VRM 80 V Reverse Voltage VR 80 V Maximum Peak) Forward Current

Contextual Info: SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low Forward Voltage C A 6 2 5 3 4 D Ultra- Small Surface Mount Package 1 A1 Small Total Capacitance C Fast Reverse Recovery Time MAXIMUM RATING Ta=25

MA153

Abstract: MA153A MA3X153 MA3X153A R10D2
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C

MA153

Abstract: MA153A MA3X153 MA3X153A
Contextual Info: Switching Diodes MA3X153, MA3X153A MA153, MA153A Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Parameter 2 1 (0.65) • Small terminal capacitance, Ct

panasonic ma diodes sc-59 Marking

Abstract: MA153 MA153A MA3X153 MA3X153A
Contextual Info: Switching Diodes MA3X153, MA3X153A MA153, MA153A Silicon epitaxial planar type Unit : mm 0.40+0.10 –0.05 For switching circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Small terminal capacitance, Ct • Two diodes are connected in series in the package

MA153

Abstract: MA153A MA3X153 MA3X153A
Contextual Info: Switching Diodes MA3X153, MA3X153A MA153, MA153A Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Small terminal capacitance, Ct • Two diodes are connected in series in the package 1.5 0.95 + 0.2 2.9 − 0.05

IR 30 D1

Abstract: marking code B2D marking code 3S diode marking 74 MARKING CODE VF marking code 4 marking d2 SOT d231 marking b1d diode a5d
Contextual Info: Central CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SUPERmini SILICON SCHOTTKY DIODES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini™ surface mount package, designed for fast switching applications

IR 30 D1

Abstract: semiconductor case marking 16 marking db2 marking db2 sot23 DA5 diode diode marking 74 DA5 marking marking code R5 sot23 sot23 marking code 16 schottky marking code 16
Contextual Info: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S TM Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.

MA153

Abstract: MA153A MA3X153 MA3X153A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 (0.65)

1S44

Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
Contextual Info: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C Symbol

MA153

Abstract: MA153A MA3X153 MA3X153A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C

marking b1d

Abstract: diode marking 74 marking code DIODE R3 marking code B2D marking code 3c
Contextual Info: CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini surface mount package, designed

Contextual Info: CMSSH-3 CMSSH-3A CMSSH-3C CMSSH-3S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3 Series types are Silicon Schottky Diodes, epoxy molded in a SUPERmini surface mount package, designed