IR S11 Search Results

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

1NA101

Abstract: S8890 APD S11519
Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically

Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.

S1133-02

Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
Contextual Info: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light

54S38

Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Contextual Info: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S

Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Photodiodes

Abstract: yag Electrical circuit S11499 TO-8 Package
Contextual Info: IR-enhanced Si PIN photodiodes S11499 series Large area, enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499 series has

Contextual Info: Housing Model Nc. C ir­ c uits Q -•/1 hag D menstons mm<n. Standard type Retainer mountable 2 XAP-Q2Y-1 XARP-02V 3 XAP-Q3Y-1 XARP-03V 5.0 .197] 4 XAP-04V-1 X ARP-04V 7.5{ .295] 5 XAP-05V-1 XARP-05V 6 XAP-06V-1 XARP-06V 7 XAP-07V-1 XARP-07V F=sr=r S'j'd ir:

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

22N19

Abstract: BC548c PHILIPS philips resistors philips crt Jinn TDA4882 48106 7 segment display 5612 AN9401 diagram tv Philips 14
Contextual Info: Application Note Improved Brightness Uniformity Ir. J.J. Hekker Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Parabola generator Brightness uniformity Brightness decrease Contrast modulation Wide-screen Report No Date Pages

S2833-01

Abstract: S3407 S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional Outline Package (P.43-46)/ Window Material*1 (mm) Active Effective Area Size Active Area (mm) (mm2) (nm) 320 — 730 1.3X1.3 1.6 S1133 /v 2.4X2.8 6.6 S1 087-01 ® /R

12x Infiniband

Contextual Info: B D H M2.5X0.45 G1S 1- -M 2.5X 0.45 • S2 16:10-25 / \ S47 ■ S48 G25 Screw ■ W IR IN G D IA G R A M 12X -12X Plug 1 Plug 2 W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 P in N um ber Pin N um ber Pin N um ber P in N um ber G 1 -G 2 5 G 1 -G 2 5 G 1 -G 2 5

30AWG

Contextual Info: B H M2.5X0.45 G1S 1- -M 2.5X 0.45 • S2 1 6i0 .25 / \ ■ S48 G25 S47 Screw ■ W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 W IR IN G D IA G R A M 12X -12X Plug 1 P lug 2 Pin N um ber P in N um ber Pin N u m b er Pin N um ber G 1 -G 2 5 G 1 -G 2 5 G 1 -G 2 5

Contextual Info: Dat a Sh eet , DS 1, S ept . 20 00 SBCX-X S / T B u s I n t e r f a c e C ir c u i t E x t e n d e d PEB/PEF 3081 Version 1.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-09-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

DIODE SMD S44

Abstract: TE 2161 motorola tic 122 C510 C768 ITS04492 MQFP44 TQFP48 uc 3081 IOM-2 Handler
Contextual Info: Dat a Sh eet , DS 1, S ept . 20 00 SBCX-X S / T B u s I n t e r f a c e C ir c u i t E x t e n d e d PEB/PEF 3081 Version 1.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-09-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

cp1h

Abstract: KMPDB0324EC
Contextual Info: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to

Contextual Info: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to

TO8c

Contextual Info: — -rJ'k ^onuonn 2/99 ‘ COMPONENTS / Ir AC281 AC282 10 TO 250 M H z TO-8 C ASC AD AB LE A M P LIFIER S Typical Values Low Noise Figure. High Gain. High Output L evel.

KMPDB0324EC

Abstract: S10420-01
Contextual Info: IR-enhanced CCD image sensors S11510 series Enhanced near infrared sensitivity: QE=40% λ=1000 nm The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge