IR SII Search Results

Contextual Info: Alle Hechte Vorbehalten/ All rights resened I r o v o ir o ir o ir o ir o ir o ir o ir o ir o ir o ir o i M3x10 Monta geausschni 11/ p ane I cut out 0A I * £ L9 «¿ L9 «¿ L9 t¿ LP «JLP «JLP «JLP «JL9 «JL9 «¿ L? «¿ L? tJP «J JL 13 10 11 12 2< EfcS

D-32339

Contextual Info: Alle echte *orbehallen/ Ul riqhls resemi ir ri \ / ci ir ir 58 X All Oiiensions in • lechn. (hinder. licht tolerierte lasse/ free siie lilermes Original Size Oli A ( 2:1 Oat. laae Detail. 0 7 . 1 2 . 0 0 ROH. Insp. KR Stand. HARTING KGaA 28865 Mod. Dat

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

U2S35B

Contextual Info: Tem ic U2535B S e m i c o n d u c t o r s Preamplifier for IR Remote Control Description The IC U2535B-FP is a complete IR receiver for data communication. The PIN photodiode converts the trans­ mitted IR telegram into electronic input signals. This is separated by a special input circuit. The characteristics

SR10

Contextual Info: DO NOT SCALE DIMENSIONS T H IR D M ETR IC IN m m A N G LE P R O J E C T IO N 19 SECTION A- A ^ L 3 7 ,9 w M g g IW I m A ÉIÉH 8B H SII1IB IB IB IB IISI IW I ¿5 0 ,9 5 r w i w M w M m m m B B K M w M w a w i R ir & ir w i a a a a IW I Ä MAX• 2,0 -1 8 x 2 , 0 = 3 6 , 0

MIL-STD-45662

Abstract: river resistor
Contextual Info: m i r o ir c ir CMM-2 GaAs MMIC 2-6 GHz Amplifier Chip Product Description • Small Size 1000 x 750 microns • Low Power Consumption • Directly Cascadable • Excellent Performance over Temperature • Ion Implanted Active Layers The CMM-2 contains two

NJII3422L

Abstract: NJU3422 SDIP24
Contextual Info: NJU3422 S í* * » h o - ÿ K7-f/< • ft fÆ Â l 4 % NJU3422 là , 4 /8 1 ' v 3 > I- d - 7 K 7 1 '/ ìT ', > r u v ^ ÿ , ÿ ^ - r —?R A M , T Y L x 7 .* 't 7 > i’ , a v s i r s K 7 - f / < ir ir T f liÄ s n T v . 'ir . Ä R S K ^ - fA » JE 4 5 V

js 8017

Abstract: 17VDC ICL 8007 C 0-50Vdc geophone 050VDC 8008
Contextual Info: n i~ir n 'm frifn T -i'yjjij BOUMA R / b J H I T E TECHNOLOGY 07 »TJ B o w m a r/IH Ih ite G D OGa ^M Ö 1 T ^ J i:/3 HYBRID THREE TERMINAL VOLTAGE REGULATORS T e c h n o lo g y ; ir/>-w , 8007 8008, 8009 iv- Siili mmmsmmim mism. F lâ T ü iiS M Provides £ 1% Temperatur Stability

sil150a

Contextual Info: Sil 150 / Sil 150A PaneiLink Digital Transmitter March 1999 S ilic o n I m a g e General Description Features As the universal transm itter, S ir l5 0 /S ir l 50A uses PaneiLink Digital technology to support displays ranging from VG A to SXG A 25-112 MHz . The

Contextual Info: •I 4302271 00S415S 33 HARRIS SSb ■ H AS IR FF230/231/232/233 IR FF230R /231R /232R /233R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -205A F • 4.5A and 5.5A, 150V - 200V • rDS on = 0 .4 0 and 0.6 0 • Single Pulse Avalanche Energy Rated*

2SA134B

Contextual Info: Ordering number: EN 1290C 2SA1348/2SC3402 PNF/ NPN Epitaxial Planar Silicon Transistors Sw itching Applications _ with B ia s Resistance / / Jffc:., Z ./ / A p p lic a tio n s S w it c h in g c ir c u it , in v e rte r, in te r fa c e c ir c u it , d riv e r

IRFZ 150 circuit diagram

Abstract: irfz 44 ir irfz
Contextual Info: £ j 40 40 SGS-THOMSON ï ULKgraMOeS IRFZ IRFZ FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E IR F Z 4 0 IR F Z 4 0 F I . . . . . . . V dss RDS on Id 50 V 50 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.022 Q. AVALANCHE RUGGED TECHNOLOGY

HFC-150

Contextual Info: Confidential HFC-150 SII - Quartz Crystal New Product - Seiko Instruments Inc. Features * High density mounting type SMD of 1.6mm thickness * IR relowable tubular type with lead bent in tape/reel * Excellent shock and heat resistance Standard Specifications

Contextual Info: 3D7501 data delay devices;inc. MONOLITHIC MANCHESTER ENCODER SERIES 3D7501 _ PACKAGES FEATURES All-siiicon, low-power CMOS technology TTL/CMOS compatible inputs and outputs Vapor phase, IR and wave solderable Auto-insertable (DIP pkg.) Low ground bounce noise

80ACPU

Abstract: k747 B452A HJU6452A HJU645ZF NJU6452A NJU645ZA
Contextual Info: CNJ ir a -<- V -> l[\ V • • V ^a- c o A K V ÍN Ih V 3S ÎK g ^ 116 • m u- A ih & V U . IS1 Jig M V iK Û U- -“- <N o -> S' AJ -J co LO lì1 CM S X m V -E ir< -> A _ l 'AJ V °rs £ s X A -5- o jiij •Inc l> - !? S j- U K •> IP n -5 * K * :-' U

e14B

Abstract: IRF1401 141r IRF140
Contextual Info: ¡ 2 H A R R IR F 14 0 / 1 4 1 / 1 4 2 / 1 4 3 I S IR F 1 40R /14 1 R /14 2 R /1 4 3 R A u g u st N-Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO -2Q 4AE • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 i! and 0 .1 0 ii • Single Pulse Avalanche Energy Rated*

SEG NC3

Abstract: NJU6460A
Contextual Info: « « co co "N V ir> iz. Sè ir» i □ A n i -F5 -H o HJg •CV i3i3 -c* rffQJf à ff •« S i S f H ’DlP {+ 2 U Ü 5 K j. ÌN 3 IÌ. rs * t r i ,->» § • X . co #rB7fcSïfê co co ■ *a - j g ^ m ia i i 3i 3 4 OC Iff 5 X . I >i - M2 - j - A IO c , LO

Contextual Info: English Dansk Svenska Norsk Suomi Nederlands Magyar # indirection # henvisning # omdirigering # Indir.ref # mjono->mtj # indirectie # irány ß differentiate ß( differentier ß( differentiera ß( deriver ß( derivoi ß( differentieer ß( derivál ì( integrate

VW-1 H

Abstract: L3934A 32L3
Contextual Info: r = J S G S -T H O M S O N ^ 7 # . K Æ D M tE ü i »*© L3914A L3924A - L3934A SPEECH AND 14 MEMORY DIALER WITH HOLD FUNCTION ADVANCE DATA S P E E C H C IR C U IT • 2 TO 4 W IR E S C O N VE R S IO N ■ P R E S E N T TH E P R O P ER DC PATH FOR T H E

Contextual Info: Sii ir u r r ^ f mmmmtß iwitfnwi | VN0606 VN0610 / / j r» N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^D S O N ^D(ON) b v dgs (max) (min) TO-92 60V 3Q 1.5A V N 0 60 6L 60V 5Q 0.75A VN 0610LL Features

VN1710

Abstract: VN1706D
Contextual Info: Sii ir u r r ^ m m m m tß iw itfnw i f | //j r VN1706 VN1710 » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^D S O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 170V 6Q 1.0A VN1706B VN1706L VN1706D

Transistor 126m

Abstract: 2SD1381 QS 100 NPN Transistor
Contextual Info: RO HM CO LTD 40E D -ir 7020= =]=] OOOSflbO 7 B R H M m /Transistors 2SD1381 - 7 ^ 3 3 - OS' 2 S D 1 3 S 1 '> u = i> Freq. Power Amp. npn Epitaxial Planar NPN Silicon Transistor •

polystyrene TRW capacitor

Contextual Info: Polystyrene Metallized Carrier Capacitors Wrap & Fill Case Type X863 Formerly TRW X1263 Series • • • • • • • Self-Healing Subminiature Size Excellent Retrace Extremely High IR Very Low Dielectric Absorption High Voltage Breakdown Low Controlled Negative TCC:

Contextual Info: smgc FDC97W34X STANDARD MICROSYSTEMS CORPORATION Integrated Super I/O Controller with Wake-Up Features and Fast IR FEATURES 5 Volt Operation Plug & Play 1.OA Compliant Supports 13 IRQs, Four DMA Channels, Full 16 Bit Addresses Decoding Capable of ISA Bus IRQ Sharing