IRF46 Search Results

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

MOSFET IRF460

Abstract: IRF460 IRF462 MOSFET IRF460 flat package irf460 switching MOSFET 1rf460 1RF460 la1620 IRF46 AJZH
Contextual Info: Preview Products File Number IRF460, IRF462 2277 Avalanche-Energy-Rated N-Channel Power MOSFETs 21 A and 19 A, 500 V rDS on = 0.27 O and 0.35 O N-CHANNEL ENHANCEMENT MODE □ Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

irf460

Abstract: TL 2223
Contextual Info: IRF460 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52)

irf460

Contextual Info: PD-90467A IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF460 500V 0.27Ω ID 21A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf460

Abstract: IRF462 IRF460C MOSFET IRF460 F462
Contextual Info: IRF460 IRF462 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 21A and 19A, 500V • rD S °n = BO TTO M V IE W and 0 .3 5 ÎÎ • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited

1RF620

Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

IRF360

Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

Contextual Info: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET'TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF460

MOSFET IRF460

Abstract: IRF460 APPLICATIONS OF IRF460 irf460 switching diode 500v 10A
Contextual Info: PD -90467 IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21 The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: IRF-46 www.vishay.com Vishay Dale Inductors, Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin coating for humidity

irf411

Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430
Contextual Info: - 252 - Mi X m % *± « * % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &

IRF-46

Abstract: irf 48
Contextual Info: IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design. • Special magnetic core structure contributes to high Q and self-resonant frequencies. • Treated with epoxy resin coating for humidity resistance to

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

Leaded Magnetics and Inductors

Abstract: IRF power mosfets catalog dale ihd-3 Irf 1540 N SRF 2769 irf 3719 34051 fet 2SF 826 transistor IRF 9734 irf 1507 data sheet
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book LEADED MAGNETICS AND INDUCTORS vishay DALE vsD-db0058-0112 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

MOSFET IRF460

Abstract: IRF460 irf462
Contextual Info: 4302571 □DS3cî7a 413 • H A R R I HAS S I R F 4 6 0 I R F 4 6 2 N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 21A and 19A, 500V B O TTO M VIE W • rD S °n = 0 -2 7 0 and 0 .3 5 fl • Single Pulse Avalanche Energy Rated

IM-10RFCM-13

Abstract: LT 5239 B0825 m39010 IHD-3 MIL-C-39010 dale ihd-3 SIM-0204 transistor IRF 630 ILS-3825
Contextual Info: Packaging Methods Vishay Dale Inductors and Transformers SURFACE MOUNT PRODUCTS [Numbers in brackets indicate millimeters] Tape and Reel W P User Direction of Feed Carrier Dimensions PACKAGE CODE REEL SIZE CARRIER TAPE WIDTH W COMPONENT PITCH (P) UNITS/

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

irf 1740

Abstract: Product Selector Guide
Contextual Info: INDUCTOR MODELS IM-2 IM-4 | IM-6 IM-8 i_ IM-10 IM-6-38 IM-6RFCS-40 IM-10-22 IM-10-28 IM-10-31 IM-10-37 CD 3 [MILLIMETERS] INCHES a l M PICTURES 0.210 [5.33] 0.260 [6.60] 0.385 [9.78] 0.570 [14.48] 0.570 [14.48] 0.750 [19.05] 0.570 [14.48] 0.570

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .