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    IRF530 IN Search Results

    IRF530 IN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74F433SPC
    		Rochester Electronics LLC 74F433 - FIFO Visit Rochester Electronics LLC Buy
    74F403SPC
    		Rochester Electronics LLC 74F403 - FIFO, 16X4, Synchronous, TTL, PDIP24 Visit Rochester Electronics LLC Buy
    CY7C4285-15ASC
    		Rochester Electronics LLC CY7C4285 - 64K X 18 Deep Sync FIFO, Commercial Temp Visit Rochester Electronics LLC Buy
    CY7C429-20VC
    		Rochester Electronics LLC CY7C429 - FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDSO28 Visit Rochester Electronics LLC Buy
    AM7200-25JC
    		Rochester Electronics LLC AM7200 - FIFO, 256X9, 25ns, Asynchronous, CMOS, PQCC32 Visit Rochester Electronics LLC Buy

    IRF530 IN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN569

    Abstract: IRF530
    Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high


    Original     		IRF530/D IRF530 AN569 IRF530 PDF

    IRF530

    Abstract: IRF530FI
    Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF530 IRF530FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 10 A TYPICAL RDS(on) = 0.095 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI 100oC 175oC O-220 ISOWATT220 IRF530 IRF530FI PDF

    IRF530

    Abstract: tr irf530
    Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		O-220 IRF530 O-220 IRF530 tr irf530 PDF

    AN569

    Abstract: IRF530
    Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high


    Original     		IRF530/D IRF530 AN569 IRF530 PDF

    irf530

    Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
    Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		IRF530 O-220 irf530 IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag PDF

    IRF530

    Abstract: tr irf530
    Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		IRF530 O-220 IRF530 tr irf530 PDF

    MAX1664

    Abstract: irf530 IRF530 application
    Contextual Info: IRF530 N-CHANNEL 100V - 0.12Ω - 16A TO-220 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA TYPE IRF530 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.12Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		O-220 IRF530 O-220 MAX1664 irf530 IRF530 application PDF

    DM 321

    Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
    Contextual Info: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate


    Original     		IRF530 IRF530, RF1S530SM DM 321 IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 PDF

    IRF530

    Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
    Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530 PDF

    IRF530

    Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
    Contextual Info: IRF530 IRF530FI  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		IRF530 IRF530FI IRF530F 100oC 175oC O-220 ISOWATT220 IRF530 IRF530 IRF530FI DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530 PDF

    BU271

    Abstract: IRF540 24334 FSN0920
    Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A


    OCR Scan     		O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920 PDF

    irf530

    Abstract: 929E-10 IRF530 fairchild
    Contextual Info: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power


    Original     		IRF530 IRF53 O220AB O-220AB O-220AB IRF530 929E-10 IRF530 fairchild PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    RF1S540

    Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
    Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		IRF530, RF1S530SM IRF53 O220AB O263AB RF1S540 RF1S540SM9A RF1S530SM OF IRF530 530uH PDF

    IRF530 mosfet

    Abstract: TA17411 IRF530 TB334 irf530g
    Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		IRF53 O220AB O263AB IRF530 IRF530 mosfet TA17411 IRF530 TB334 irf530g PDF

    IRF530 marking

    Abstract: irf530
    Contextual Info: 4Ô55M52 DOlMbSb DbS International Rectifier 11NR PD-9.3070 IRF530 HEXFET Power M O S F E T bSE T> INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		55M52 IRF530 OG14bbl IRF530 marking irf530 PDF

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


    Original     		2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76 PDF

    RF530

    Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
    Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS


    OCR Scan     		T-39-11 IRF530 IRF531 IRF532 IRF533Î O-220AB IRF530, IRF531, IRF532, IRF533 RF530 1RF530 IRF530 HEXFET TRANSISTORS IR IRF532 1RF531 TYN 058 LIRF530 PDF

    irf530

    Contextual Info: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		IRF530/531 IRF530 IRF531 Q02fl755 irf530 PDF

    IRF530

    Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
    Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM IRF530 IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm PDF

    IRF530

    Abstract: IRF530 marking
    Contextual Info: PD-9.3070 International [I«R ]Rectifier IRF530 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS=100V R DS on = 0 - 1 6 0


    OCR Scan     		IRF530 O-220 IRF530 IRF530 marking PDF

    irf530

    Abstract: IRF130 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133
    Contextual Info: _ _ _ _ _ F A jR C H i^ IRF130-133/IRF530-533 T - ! ? -" M TP20N08/20N10 / 39/ N-Channel Power MOSFETs, 20 A, 60-100 V A Schlumberger Company Power And Discrete Division_ _ _ Description These devices are n-channei, enhancement mode, power


    OCR Scan     		IRF130-133/IRF530-533JjlHTÃ MTP20N08/20N10 IRF130 IRF130-133 IRF530-533 MTP20N08/20N10 PC10021F IRF130-133/IRF530-533 T-39-11 irf530 tr irf530 20n10 20N08 MTP20N10 MTP20N08 IRF131 IRF132 IRF133 PDF

    transistor irf 647

    Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
    Contextual Info: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,


    OCR Scan     		IRF530 IRF531 IRF532 IRFS33 IRF533 transistor irf 647 transistor IRF 531 transistor irf 064 irf 570 p570 PDF

    IRF530

    Contextual Info: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		IRF530 O-220 T0-220 IRF530 PDF