IRFI630 Search Results

IRFI630 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFI630	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF	661.43KB	9
IRFI630	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)	Scan	PDF	180.5KB	6
IRFI630	International Rectifier	FullPak - Fully Isolated HEXFET	Scan	PDF	68.52KB	1
IRFI630A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF	264.62KB	7
IRFI630A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRFI630A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	171.67KB	6
IRFI630B	Fairchild Semiconductor	200 V N-Channel MOSFET	Original	PDF	661.42KB	9
IRFI630B	Fairchild Semiconductor	200V N-Channel MOSFET	Original	PDF	666.38KB	9
IRFI630BTU	Fairchild Semiconductor	200V N-Channel B-FET / Substitute of IRFI630A	Original	PDF	661.42KB	9
IRFI630BTU_FP001	Fairchild Semiconductor	200V N-Channel B-FET / Substitute of IRFI630A	Original	PDF	661.42KB	9
IRFI630G	International Rectifier	200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package	Original	PDF	944.4KB	7
IRFI630G	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRFI630G	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.9A TO220FP	Original	PDF		8
IRFI630G	International Rectifier	HEXFET Power MOSFET	Scan	PDF	180.5KB	6

IRFI630G	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)	Scan	PDF	180.49KB	6
IRFI630G	International Rectifier	HEXFET Power MOSFET	Scan	PDF	180.5KB	6
IRFI630G	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N Channel, Power, 200V, 5.9A, Pkg Style Fully Isolated TO-220 Fullpak	Scan	PDF	50.01KB	1
IRFI630G	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	41.32KB	1
IRFI630G	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	116.09KB	1
IRFI630GPBF	International Rectifier	100V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-220 FullPAK package	Original	PDF	944.4KB	7

IRFI630 Price and Stock

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Vishay Siliconix IRFI630GPBF MOSFET N-CH 200V 5.9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI630GPBF	Tube	1,588		1	1 $1.41 10 $1.41 100 $1.21 1000 $1.16 10000 $1.16	Buy Now
Vishay Siliconix IRFI630G MOSFET N-CH 200V 5.9A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFI630G	Tube			1,000	1 - 10 - 100 - 1000 $2.96 10000 $2.96	Buy Now
Bristol Electronics	IRFI630G		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFI630G		320			1 $7.44 10 $7.44 100 $4.59 1000 $4.09 10000 $4.09	Buy Now
Vishay Intertechnologies IRFI630GPBF MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRFI630GPBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFI630GPBF	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 $1.25 10000 $1.18	Buy Now
Mouser Electronics	IRFI630GPBF		1,018			1 $1.33 10 $1.33 100 $1.18 1000 $1.11 10000 $1.10	Buy Now
TTI	IRFI630GPBF	Tube	500		50	1 - 10 - 100 $1.09 1000 $1.07 10000 $1.07	Buy Now
TME	IRFI630GPBF		795		1	1 $2.59 10 $2.59 100 $0.83 1000 $0.72 10000 $0.72	Buy Now
ComSIT USA	IRFI630GPBF		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	IRFI630GPBF			9 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRFI630GPBF		500		1	1 - 10 - 100 $0.70 1000 $0.65 10000 $0.65	Buy Now
International Rectifier IRFI630 TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6.3A I(D),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFI630		100			1 $1.88 10 $1.88 100 $1.13 1000 $1.13 10000 $1.13	Buy Now
International Rectifier IRFI630G 5.9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFI630G		30			1 $7.44 10 $3.72 100 $3.72 1000 $3.72 10000 $3.72	Buy Now

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IRFI630 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFI630G Abstract: 59-A Contextual Info: PD-9.652A International S Rectifier IRFI630G HEXFET P ow er M O S FE T • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D 111 Vdss = 200V \ G \ R DS on =	OCR Scan	IRFI630G O-220 IRFI630G 59-A	PDF
Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 12-Mar-07	PDF
Contextual Info: IRFI630 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)6.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)25 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)32 Minimum Operating Temp (øC)	Original	IRFI630	PDF
IRFI630G Abstract: SiHFI630G SiHFI630G-E3 Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 11-Mar-11 IRFI630G SiHFI630G-E3	PDF
AN609 Abstract: IRFI630G SiHFI630G Contextual Info: IRFI630G_RC, SiHFI630G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFI630G SiHFI630G AN609, 06-May-10 AN609	PDF
IRF1630 Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A Contextual Info: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A	OCR Scan	IRFI630G RF1630G IRF1630 irf1630g IRF163 1RF16 59-A 9652A	PDF
Contextual Info: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B O-262 I630B IRFI630B IRFI630BTU FP001	PDF
Contextual Info: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B	PDF
IRFI630B Abstract: IRFW630B Contextual Info: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B IRFI630B	PDF
Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148	Original	IRFI630GPbF O-220 12-Mar-07	PDF
Contextual Info: PD - 94846 IRFI630GPbF • Lead-Free 11/14/03 Document Number: 91148 www.vishay.com 1 IRFI630GPbF Document Number: 91148 www.vishay.com 2 IRFI630GPbF Document Number: 91148 www.vishay.com 3 IRFI630GPbF Document Number: 91148 www.vishay.com 4 IRFI630GPbF Document Number: 91148	Original	IRFI630GPbF O-220 08-Mar-07	PDF

N-Channel 40V MOSFET Abstract: 125 diode IRFW630B N-Channel MOSFET 200v IRFI630B Contextual Info: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B N-Channel 40V MOSFET 125 diode N-Channel MOSFET 200v IRFI630B	PDF
IRFI630B Abstract: IRFW630B Contextual Info: IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B IRFI630B	PDF
IRFI630G Abstract: SiHFI630G SiHFI630G-E3 Contextual Info: IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI630G, SiHFI630G O-220 18-Jul-08 IRFI630G SiHFI630G-E3	PDF
Contextual Info: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm	OCR Scan	465545E DD151E4 IRFI630G O-220	PDF
W630B Contextual Info: IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRFW630B IRFI630B O-263 W630B IRFW630BTM FP001 W630B	PDF
94846 Contextual Info: PD - 94846 IRFI630GPbF • Lead-Free www.irf.com 1 11/14/03 IRFI630GPbF 2 www.irf.com IRFI630GPbF www.irf.com 3 IRFI630GPbF 4 www.irf.com IRFI630GPbF www.irf.com 5 IRFI630GPbF 6 www.irf.com IRFI630GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches	Original	IRFI630GPbF O-220 94846	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
IRGKI165F06 Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)	Original	OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
irf1740 Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640	PDF

IRFI630 Search Results

IRFI630 Datasheets (21)

IRFI630 Price and Stock

Vishay Siliconix IRFI630GPBF

Vishay Siliconix IRFI630G

Vishay Intertechnologies IRFI630GPBF

International Rectifier IRFI630

International Rectifier IRFI630G

IRFI630 Datasheets Context Search

IRFI630G

IRFI630G

AN609

IRF1630

IRFI630B

N-Channel 40V MOSFET

IRFI630B

IRFI630G

W630B

94846

fqp60n06

IRGKI165F06

BC548 TRANSISTOR REPLACEMENT

irf1740