IRFP450 MOSFET Search Results

Contextual Info: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 . . . . . VDSS 500 V RDS(on) ID < 0.4 n 14 A TYPICAL Ros(on)= 0.33 Q

power switching with IRFP450 schematic

Abstract: switching with IRFP450 schematic IRFP450 datasheet irfp450 mosfet IRFP450 from st irfp450 mosfet application IRFP450
Contextual Info: IRFP450  N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Abstract: power switching with IRFP450 schematic switching with IRFP450 schematic datasheet irfp450 mosfet application IRFP450
Contextual Info: IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ) s (

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP450

Abstract: power switching with IRFP450 schematic IRFP450S tr irfp450
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP450

Abstract: power switching with IRFP450 schematic
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP450

Abstract: switching with IRFP450 schematic power switching with IRFP450 schematic application IRFP450 datasheet irfp450 mosfet SWITCHING WELDING BY MOSFET AC to DC smps circuit diagram irfp450 datasheet tr irfp450 WELDING SWITCHING APPLICATION NOTE
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP630

Abstract: Irfp250 irfp460 IRFPG60
Contextual Info: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460

Contextual Info: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

irfp450

Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Contextual Info: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Contextual Info: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Abstract: IRFP450 SiHFP450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP450

Abstract: irfp450 ir ir irfp450
Contextual Info: International S Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 4 0 0

application IRFP450

Abstract: IRFP450 SiHFP450 irfp450 mosfet irfp450 mosfet to220 siliconix irfp450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

IRFP450

Abstract: IRFP451 bonding TO-247 IRFP453 IRFP452
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 H a rris 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power