IRFP450 POWER Search Results

Contextual Info: i, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFP450 N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 . . . . . VDSS 500 V RDS(on) ID < 0.4 n 14 A TYPICAL Ros(on)= 0.33 Q

power switching with IRFP450 schematic

Abstract: switching with IRFP450 schematic IRFP450 datasheet irfp450 mosfet IRFP450 from st irfp450 mosfet application IRFP450
Contextual Info: IRFP450  N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Abstract: power switching with IRFP450 schematic switching with IRFP450 schematic datasheet irfp450 mosfet application IRFP450
Contextual Info: IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE IRFP450 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.4 Ω 14 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFP450

Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ) s (

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRFP450

Abstract: IRFP450FI 0613D IRFW450
Contextual Info: IRFP450/FI IRFW450 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID IRFP450 IRFP450FI IRFW450 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14 A 9A 14 A • ■ ■ ■ TO-247 TYPICAL RDS(on) = 0.33 Ω AVALANCHE RUGGED TECHNOLOGY

IRFP450

Abstract: power switching with IRFP450 schematic IRFP450S tr irfp450
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP450

Abstract: power switching with IRFP450 schematic
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

IRFP450

Abstract: switching with IRFP450 schematic power switching with IRFP450 schematic application IRFP450 datasheet irfp450 mosfet SWITCHING WELDING BY MOSFET AC to DC smps circuit diagram irfp450 datasheet tr irfp450 WELDING SWITCHING APPLICATION NOTE
Contextual Info: IRFP450 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh II MOSFET TYPE IRFP450 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP450 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

IRFP630

Abstract: Irfp250 irfp460 IRFPG60
Contextual Info: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460

Contextual Info: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

diode B14A

Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
Contextual Info: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Contextual Info: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Abstract: IRFP450 SiHFP450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

switching with IRFP450 schematic

Abstract: power switching with IRFP450 schematic IRFP450 STE36N50 LD36A GC54800
Contextual Info: SGS-THOMSON STE36N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE Voss R o S o n to STE36N50 500 V < 0.14 £! 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . {SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

IRFP450

Abstract: irfp450 ir ir irfp450
Contextual Info: International S Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 4 0 0