IRFP450 POWER MOSFET Search Results

datasheet irfp450 mosfet

Abstract: rectifier d 355 n 2000 IRFP450 TA17435 TB334
Contextual Info: IRFP450 Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP450 • 14A, 500V • rDS ON = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

application IRFP450

Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

10VJ

Abstract: IRFP450 TA17435 TB334
Contextual Info: IRFP450 Semiconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A, 500V • rDS ON = 0.40062 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

application IRFP450

Contextual Info: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP630

Abstract: Irfp250 irfp460 IRFPG60
Contextual Info: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460

Contextual Info: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFP450

Abstract: IRFP451 bonding TO-247 IRFP453 IRFP452
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 H a rris 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfp450

Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Contextual Info: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

diode B14A

Abstract: B14A diode 1RFP450 diode b14A surface B14A B14A marking 1D24 IRFP450
Contextual Info: International Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 500V ^DS on = 0 -4 0 Í2

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP450

Abstract: IRFP452 IRFP451 IRFP453 TA17435 TB334 irfp-450
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 S E M I C O N D U C T O R 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 12A and 14A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP450

Abstract: irfp450 ir ir irfp450
Contextual Info: International S Rectifier PD-9.458C IRFP450 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 4 0 0

application IRFP450

Abstract: IRFP450 SiHFP450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

application IRFP450

Abstract: IRFP450 SiHFP450 irfp450 mosfet irfp450 mosfet to220 siliconix irfp450
Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 150 Qgs (nC) 20 Qgd (nC) 80 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

IRFP450

Abstract: IRFP452 irfp450 samsung IRFP451 IRFP453 IRFP250 IRFP251 IRFP252 IRFP253 tr irfp450
Contextual Info: [ 7964142 ÏF lT T tm M a INC SAMSUNG S E M I C ONDUCTOR 00[]52HLt 3 98 D 0 5 2 2 4 I D T ~ 3 ñ -13 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

IRFP450 MOSFET

Abstract: IRFP450 mosfet driver 400v
Contextual Info: IRFP450 A dvanced Power MOSFET FEATURES B V dss = 500 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .4 £ 2 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

IRFP450 Power Mosfet

Contextual Info: Standard Power MOSFET IRFP450 VDSS = 500 V ^D co nt — 14 A ^ D S (o n ) = 0 -4 0 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS T j = 25°C to 150°C 500 V Voc« V«, T j = 25°C to 150°C; Ros = 1 M£2 500 V C ontinuous ±20

Contextual Info: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability