IRFU91 Search Results

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)

IRFR9120

Abstract: irfu9120 SiHFR9120 SiHFR9120-E3 SiHFR9120-GE3 SiHFU9120
Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)

IRFR9110

Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

IRFR912

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S

Contextual Info: IRFR/U9120N D -P ak T O -2 52 A A l l l l l l l I-P ak T O -25 1 A A Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D VDSS = -100V The D-Pak is designed for surface mounting using vapor

IRFR9110

Abstract: IRFU9110 SiHFR9110 SiHFR9110-E3
Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

IF9120

Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Contextual Info: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model

IF9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field

FR9120

Abstract: 9121
Contextual Info: IRFR9120/9121 IRFU9120/9121 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area

MOSFET IRF 380

Contextual Info: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω

6ba diode

Abstract: 1RFU9120 V3F diode AN-994 IRFR9120 IRFU9120 1RFR9120 d68a
Contextual Info: International rc : Rectifier PD-9.520D IRFR9120 IRFU9120 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9120 Straight Lead (IRFU9120) Available in Tape & Reel P-Channel Fast Switching

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK

Contextual Info: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)

IRFR9120N

Abstract: IRFU9120N
Contextual Info: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω

Contextual Info: IRFU9120 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)5.6 I(DM) Max. (A) Pulsed I(D)3.6 @Temp (øC)100# IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42 Minimum Operating Temp (øC)-55õ

Contextual Info: IRFU9110 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)3.4 I(DM) Max. (A) Pulsed I(D)2.4 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)-55õ

Diode P 619

Abstract: EIA-541 IRFR120 IRFU120 U120 marking code diode 14
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9110PbF 2 www.irf.com IRFR/U9110PbF www.irf.com 3 IRFR/U9110PbF 4 www.irf.com IRFR/U9110PbF www.irf.com 5 IRFR/U9110PbF 6 www.irf.com IRFR/U9110PbF Peak Diode Recovery dv/dt Test Circuit

*FR9110

Contextual Info: IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9110, SiHFR9110)

EIA-541

Abstract: IRFR120 IRFU120 U120
Contextual Info: PD - 95324A IRFR9110PbF IRFU9110PbF • Lead-Free Document Number: 91279 12/14/04 www.vishay.com 1 IRFR/U9110PbF Document Number: 91279 www.vishay.com 2 IRFR/U9110PbF Document Number: 91279 www.vishay.com 3 IRFR/U9110PbF Document Number: 91279 www.vishay.com

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

Contextual Info: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V

irfr9120pbf

Abstract: IRFU120 U120
Contextual Info: PD - 95096A IRFR9120PbF IRFU9120PbF • Lead-Free 1 IRFR/U9120PbF 2 IRFR/U9120PbF I-Pak TO-251AA Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRF U120 WITH AS S EMBLY LOT CODE 5678

s276

Abstract: fr9110 PLIC 9110
Contextual Info: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)