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    IRFY230 Search Results

    IRFY230 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY230 Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY230 Semelab Hermetically Sealed N-Channel Power MOSFET for HI-REL Apps Scan PDF
    IRFY230C Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY230SM Semelab Hermetically Sealed N-Channel Power MOSFET for Hi-Reliability Applications Scan PDF

    IRFY230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n channel mosfet to-257

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226303 TECHNICAL DATA DATA SHEET 622, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226303 IRFY230M 250mA SHD226303 O-257 n channel mosfet to-257

    IRFY230C

    Abstract: No abstract text available
    Text: IRFY230C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 9A RDS(ON) = 0.4Ω Ω 1.0 (0.039)


    Original     		PDF IRFY230C O257AB O257AB O220M) 13-Sep-02 IRFY230C

    IRFY230M

    Abstract: SHD226303
    Text: SENSITRON SEMICONDUCTOR SHD226303 TECHNICAL DATA DATA SHEET 622, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226303 IRFY230M IRFY230M SHD226303

    mosfet 221

    Abstract: IRFY230M SHD219303
    Text: SENSITRON SEMICONDUCTOR SHD219303 TECHNICAL DATA DATA SHEET 892, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219303 IRFY230M mosfet 221 IRFY230M SHD219303

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219303 TECHNICAL DATA DATA SHEET 892, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD219303 IRFY230M 250mA SHD219303

    IRFY230

    Abstract: No abstract text available
    Text: IRFY230 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY230 257AA IRFY230

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original     		PDF 4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS

    04NG

    Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
    Text: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE


    OCR Scan     		PDF IRFY230 T0220 T0220M T0220SM 00A//iS 300/us, 04NG DIODE T25 IRFY230 LE17 mosfet 100a 200v

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    lm3i7

    Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
    Text: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24


    OCR Scan     		PDF IN4001CSMU IN4003CSMD 60DCSM 222IA 2N2221DCSM 2N2222ADCSM 2N2222DCSM 2N2369ADCSM 2N2453D 2N2639DCSM lm3i7 BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M