IRFZ24 D2PAK Search Results

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

5d surface mount diode

Abstract: IRFZ2 IRFZ24L IRFZ24 SiHFZ24L SiHFZ24S SiHFZ24S-E3 IRFZ24S SiHFZ24
Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L)

irfz24 d2pak

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: PD- 96096 IRFZ24SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.10Ω G ID = 17A Description S Third Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFZ24 IRFZ24L IRFZ24S diode ir 10-16
Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFZ24 IRFZ24L IRFZ24S
Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: P D -9.891 A In te rn a tio n a l I Q R Rectifier IR F Z 2 4 S /L HEXFET Power M OSFET Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching V dss = 60V R D S (o n ) = 0 .1 0 ft

ltc1641

Abstract: LRF1206-01 LTC1643L LTC1643H irf7801 1500UF IRF7413 LRF1206-01-R005-J LTC1645 LTC1645CS8
Contextual Info: Final Electrical Specifications LTC1645 Dual-Channel Hot Swap Controller/Power Sequencer September 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Allows Safe Board Insertion and Removal from a Live Backplane Programmable Power Supply Sequencing

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

30 pins pcb connector

Abstract: LTC1643L IRF7413 LRF1206-01-R005-J LTC1645 LTC1645C LTC1645CS8 LTC1645I LTC1645IS8 Si4420 siliconix
Contextual Info: LTC1645 Dual-Channel Hot Swap Controller/Power Sequencer U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Allows Safe Board Insertion and Removal from a Live Backplane Programmable Power Supply Sequencing Programmable Electronic Circuit Breaker User-Programmable Supply Voltage Power-Up and

Contextual Info: LTC1645 Dual-Channel Hot Swap Controller/Power Sequencer FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Allows Safe Board Insertion and Removal from a Live Backplane Programmable Power Supply Sequencing Programmable Electronic Circuit Breaker

transistor PN2222 suitable

Abstract: IRF7413 LRF1206-01-R005-J LTC1645 LTC1645C LTC1645CS8 LTC1645I LTC1645IS8 PN2222 application not 20mA circuit breaker
Contextual Info: LTC1645 Dual-Channel Hot Swap Controller/Power Sequencer U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Allows Safe Board Insertion and Removal from a Live Backplane Programmable Power Supply Sequencing Programmable Electronic Circuit Breaker

BD 1645

Abstract: LTC1643L 20mA circuit breaker Si4420 siliconix Panasonic circuit breaker
Contextual Info: LTC1645 Dual-Channel Hot Swap Controller/Power Sequencer U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Allows Safe Board Insertion and Removal from a Live Backplane Programmable Power Supply Sequencing Programmable Electronic Circuit Breaker User-Programmable Supply Voltage Power-Up and

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES