IRGPH30M Search Results

IRGPH30MD2

Contextual Info: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPH30MD2

Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V

Contextual Info: Preliminary Data Sheet PD - 9.1115 International lü R e c tifie r IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces = 1200V • Short circuit rated - 1 0 m s @125°C, Vge = 15V

C478

Abstract: igbt socket IRGPH30MD2 irgph30
Contextual Info: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: Preliminary Data Sheet PD - 9.1115 bitemational |or]Rectifier IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V Ces = 1200V Short circuit rated -1 Ops @125°C, VGE = 15V

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

igbt 400V 20A

Abstract: IRG4PH30KD IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

Contextual Info: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

1000V diod

Abstract: irgph30k IRG4PH30K br a55 IRGPH30M
Contextual Info: PD -9.1580 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

IRGPH30M

Contextual Info: In te rn a tio n a l S U F te c tifie r IGBTs Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications Short-Circuit Rated - Optimized for Motor Control Applications FAST (cont.) 'c Part Number Continuous Collector Current VCES Collector to Emitter

IRGPH30K

Abstract: IRG4PH30K
Contextual Info: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

irgph30k

Abstract: IRGPH30M irgph30
Contextual Info: International lO R Rectifier PD -9 .1 5 8 0 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR F e a tu re s a • High short circuit rating optimized for motor control, tsc = 10|J.s, V cc = 720V , T j = 125°C, VGE= 15V

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRG4PH30KD

Abstract: IRGPH30MD2 ultra-FAST Diode 800v 5A
Contextual Info: PD- 9.1579 IRG4PH30KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V

IRGDDN600M06

Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Contextual Info: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

IRG4PH30K

Abstract: irgph30k
Contextual Info: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

IRG4PH30KD

Abstract: IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

ir igbt 1200V 10A

Abstract: DIODE JS 8 IRGPH30MD2 diode 5mm IRG4PH30KD IRGPH30M
Contextual Info: International I R Rectifier PD- 9.1579 IRG4PH30KD PRELIM IN ARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10|js, V Cc = 720V , T j = 125°C,