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Rochester Electronics LLC AUIRGSL30B60K AUIRGSL30B60K - AUTOMOTIVE IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRGSL30B60K	Bulk	7,200		135	1 - 10 - 100 - 1000 $2.23 10000 $2.23	Buy Now
	AUIRGSL30B60K	Bulk	150		150	1 - 10 - 100 - 1000 $2.23 10000 $2.23	Buy Now
Rochester Electronics LLC IRGSL30B60KPBF IGBT NPT 600V 78A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGSL30B60KPBF	Bulk	2,382		188	1 - 10 - 100 - 1000 $1.6 10000 $1.6	Buy Now
Infineon Technologies AG AUIRGSL30B60K IGBT NPT 600V 78A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AUIRGSL30B60K	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	AUIRGSL30B60K		1,150		1	1 - 10 - 100 $2.03 1000 $1.82 10000 $1.71	Buy Now
Infineon Technologies AG IRGSL30B60KPBF IGBT NPT 600V 78A TO-262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRGSL30B60KPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRGSL30B60KPBF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRGSL30B60KPBF		950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IRGSL30B60KPBF		2,382		1	1 - 10 - 100 $1.54 1000 $1.28 10000 $1.14	Buy Now
ComSIT USA	IRGSL30B60KPBF		5,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SL30B60K Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
irf 1830 Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K	PDF
Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994.	PDF
Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB	PDF
AN-994 Abstract: C-150 IRGSL30B60K Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 AN-994. O-220AB AN-994 C-150 IRGSL30B60K	PDF
SL30B60K Abstract: C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3 Contextual Info: PD - 94741 IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 150°C.	Original	IRGS30B60K IRGSL30B60K O-262 AN-994. SL30B60K C-150 IRF530S IRGS30B60K IRGSL30B60K IRL3103L wf-3	PDF
Contextual Info: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	AUIRGS30B60K AUIRGSL30B60K O-262 AUIRGSL30B60Knsible	PDF
irf 1830 Abstract: C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799 IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994. irf 1830 C-150 IRF1010 IRF530S IRGB30B60K IRGS30B60K IRGSL30B60K	PDF
IGBT 4000V Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V Contextual Info: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K SL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient	Original	AUIRGS30B60K AUIRGSL30B60K O-262 IGBT 4000V AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V	PDF
Contextual Info: PD - 97003 IRGB30B60KPbF IRGS30B60KPbF SL30B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA	Original	IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF O-220AB IRGB30B60KPbF O-262 O-220AB AN-994.	PDF
AN-994 Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K Contextual Info: PD - 94799A IRGB30B60K IRGS30B60K SL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 O-220AB AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K	PDF