IRH8250 Search Results

Contextual Info: PD - 90697E RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7250 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)

IRH3250

Abstract: IRH4250 IRH7250 IRH8250 proto to-204ae
Contextual Info: PD - 90697E RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE IRH7250 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)

diode AE 26A

Abstract: IRH3250 IRH4250 IRH7250 IRH8250
Contextual Info: PD - 90697D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE (T0-204AA/AE IRH7250 200V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si)

IRH7250

Abstract: IRH8250
Contextual Info: PD - 90697B IRH7250 IRH8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.11Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

Contextual Info: Data Sheet No. PD-9.697A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7250 IRH8250 N-CHANNEL MEGA RAD HARD 200 Volt, 0.1012, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

9697a

Abstract: photo transistor til 78 rectifier diod 250 A til 31a IRH7250 IRH7450 IRH8250 IRH8450 J1600 h51 diode
Contextual Info: Data Sheet No. PD-9.697A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7250 IRH8250 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10Q, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

IRH7250

Abstract: IRH8250 IRHF7110 IRHF8110
Contextual Info: PD - 90671B IRHF7110 IRHF8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHC7110

Abstract: IRHC7130 IRHC7150 D47 MOSFET
Contextual Info: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

Contextual Info: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250

Contextual Info: *<a:a n e e . vu. - - - c .a W Â INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S50 HEXFET TRANSISTORS IRH8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10G, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83