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Infineon Technologies AG IRH9150 Transistor MOSFET P-Channel 100V 22A 2-Pin TO-204AE - Bulk (Alt: IRH9150)
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Avnet Americas	IRH9150	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IRH9150SCV Transistor MOSFET P-Channel 100V 22A 2-Pin TO-204AE - Bulk (Alt: IRH9150SCV)
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Avnet Americas	IRH9150SCV	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

IRH9150 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRH9150		International Rectifier	RADIATION HARDENED POWER MOSFET		Original	PDF
IRH9150		International Rectifier	-100Volt, 0.075 Ohm, RAD HARD HEXFET TRANSISTOR		Original	PDF
IRH9150		International Rectifier	Radiation Hardened Power MOSFET		Original	PDF
IRH9150		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
IRH9150PBF		International Rectifier	Transistor Mosfet P-CH 100V 22A 2TO-204AE		Original	PDF

IRH9150 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRF P CHANNEL MOSFET 10A 100V Abstract: IRH9150 IRH93150 Text: PD - 90879B RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for	Original	PDF	90879B T0-204AE) IRH9150 IRH93150 -450A/ -100V, MIL-STD-750, MlL-STD-750, O-204AE IRF P CHANNEL MOSFET 10A 100V IRH9150 IRH93150
IRH9150 Abstract: IRH93150 Text: Provisional Data Sheet No. PD - 9.879A IRH9150 IRH93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100Volt, 0.075Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold	Original	PDF	IRH9150 IRH93150 -100Volt, IRH9150 IRH93150
IRH9150 Abstract: IRH93150 T0204AE Text: PD - 90879C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for	Original	PDF	90879C T0-204AE) IRH9150 IRH93150 -450A/ -100V, MIL-STD-750, MlL-STD-750, O-204AE IRH9150 IRH93150 T0204AE
Untitled Abstract: No abstract text available Text: PD - 90879C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for	Original	PDF	90879C T0-204AE) IRH9150 IRH93150 The25Â -450A/Â -100V, MIL-STD-750, MlL-STD-750,
pd908 Abstract: No abstract text available Text: PD-90879D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AE IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH9150 IRH93150 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.075Ω 0.075Ω ID -22A -22A International Rectifier’s RADHard HEXFET® technology	Original	PDF	PD-90879D T0-204AE) IRH9150 IRH93150 MIL-STD-750, MlL-STD-750, O-204AE pd908
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
IRFM9034 Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number	Original	PDF	IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	PDF	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
2N6764 JANTX Abstract: 91447 IR2113L Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450	Original	PDF	IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L
2N6782 JANTX Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE	Original	PDF	IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
2N7334 Abstract: irfg9110 H24 SMD Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130	OCR Scan	PDF	IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD
Untitled Abstract: No abstract text available Text: Data Sheet No. PD-9.879 INTERNATIONAL RECTIFIER l l & R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH91SO RAD HARD Product Summary -100 Volt, 0.120Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and	OCR Scan	PDF	IRH91SO 1x105 1x105 1x1012 MIL-STD-750, 235ft
Untitled Abstract: No abstract text available Text: Data Sheet No. PD-9.879 INTERNATIONAL RECTIFIER I i « I r REPETITIVE AVALANCHE AND dv/dt RATED IRHS15Q HEXFET TRANSISTORS RAD HARD -100 Volt, 0.120Q, RAD HARD HEXFET Product Summary International Rectifier's P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and	OCR Scan	PDF	IRHS15Q 1x10s 1x1012 MIL-STD-750,
Untitled Abstract: No abstract text available Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P) Iq O TolOO (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _	OCR Scan	PDF	IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHE9230 IRHN7054 IRHN8054