IRRH Search Results

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

P546G

Abstract: TLP546G E67149 TLP546 e6714
Contextual Info: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TDTTESO DD17455 99D 17455 TLP546G GaAs IRED & PHOTO-THYRISTOR CONTROL IA(RHS) O f 120VAC LIKE. MOTOR CONTROLS. COtfTROLlER. COPIER. H O C ELECTRIC MACHINE. . . . . : IT <H>lS) • IA (Single Phase Pull Wave,

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

Contextual Info: 4M x 32 -Bit EDO-DRAM Module SMALL OUTLINE MEMORY MODULE HYM32 V4025G D-50/-60 HYM32V4025GDL-50/-60 Advanced Information • 72-Pin Small Outline Dual-in-Line Memory Module • 4 194 034 words by 32-bit organization • Hyper Page Mode - EDO - performance

DS20

Abstract: msc23236c
Contextual Info: O K I S em ic o n d u cto r M S C 23236C /C L -X X B S 20/PS 20 2,097,152-Word x 36-Bit DRA M M ODULE : FAST PAGE M O D E TYPE DESCRIPTION The OKI MSC23236C/CL-xxBS20/DS20 is a fully decoded 2,097,152-word x 36-bit CMOS Dynamic Random Access Memory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 in SOJ

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

300mil-wide trays

Abstract: Q67100-Q2156 Q67100-Q2157
Contextual Info: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)

Contextual Info: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: CYPRESS PRELIMINARY Features • High-density 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1M x 32 • High-speed SRAMs — Access tim e of 12 ns • Low active power — 8.36W m ax. at 12 ns • 72 pins

Contextual Info: TOSHIBA {DISCRETE/OPTO} ^ 9097250 TOSHIBA <DISCRETE/OPTO D E f TOTTBSO 00174Ö0 1 | 99D 17480 D T-W-Z7 TLP6 I IJ GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­

Contextual Info: HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M x 4 components HITACHI ADE-203-872B (Z) Rev. 1.0 June 23, 1998 Description The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

7006C

Abstract: TOA8
Contextual Info: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

M8730

Contextual Info: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM

M4720D

Contextual Info: 2 2 0 \. 0BE d 96/S pssjAay ;u 0 ujnoop sin; jo pu 04; ;e suoisjAOjd 04; o; p o iq n s j 0i|ijn|. s| 0sn P0/U0S0J sm 6|j iiv uo^EJodjoQ i/\ia © £ 0 " 2 0 9 t " t ' l-V S ^5 8 9 8 1 -8 891 SZI Y i\ Tt Ot 56 P 6 II 01 58 > |o e g ) I (lU O Jj) m ru a u

Contextual Info: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V s s ^ c c P'ns

Contextual Info: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:

Contextual Info: H B 56S872E S N -6B /7B /8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-611 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S872ESN belongs to 8 Byte DIMM (Dual In-line Memory M odule) fam ily, and has been

ps2 CIRCUIT diagram

Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B