ISB12 Search Results

Contextual Info: ISB12000 SERIES CO N TIN UO US ARRAYS DATABOOK 1st ED ITIO N January 1990

K1B2816

Contextual Info: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length

ISB12000

Abstract: signal path designer
Contextual Info: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide

64X16 led matrix

Abstract: TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SG S-THOMSON DATABOOKS DB O RDER CODE a 4 BIT MCU FAMILY ET9400 DBET9400ST/1

K1S32161CD-FI70

Contextual Info: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

ba508

Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary

EM51M256A-15P

Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256
Contextual Info: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process

z80 microprocessor

Abstract: Q194 ET9400
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in colum "DB" SGS-THOMSON DATABOOKS DB a b c d e f g h i i k 1 m n P q r s t u V w y

SGS M114S

Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
Contextual Info: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.

K1B6416B6C

Abstract: UtRAM Density
Contextual Info: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support

K1S16161CA

Abstract: K1S16161CA-I
Contextual Info: Preliminary K1S16161CA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

SGS-Thomson ball grid array

Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
Contextual Info: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide

Contextual Info: CY7C291A CY7C292A/CY7C293A £i SEMICONDUCTOR *& Reprogrammable 2048 x 8 PROM Features • C apable of w ithstanding > 2001V sta tic discharge • Windowed for reprogrammability • CMOS for optimum speed/power Product Characteristics • High speed — 20 ns commercial

EM51L256A-15J

Abstract: Etron Technology
Contextual Info: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5

K1S3216BCD

Contextual Info: K1S3216BCD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft November 02, 2004 Preliminary 1.0 Finalize Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

z80 microprocessor

Abstract: Q193 CB12000 16 bit mcu ST9040 SGS-Thomson MCU st10 microwave databook
Contextual Info: SGS-THOMSON DATABOOKS DESCRIPTION 4 BIT MCU FAMILY ET9400 8 BIT MCU FAMILIES EF6801/04/05 16 BIT MPUs & ASSOCIATED PERIPHERALS AUDIO POWER and PROCESSING ICs AUTOMOTIVE PRODUCTS CB12000 SERIES STANDARD CELLS CB12000 SERIES STANDARD CELL MODULE GENERATORS ANALOG CELLS AND ARRAYS

Contextual Info: QS72211, QS72221, QS72231, QS72241 PRELIMINARY Q High-Speed CMOS 512/1K/2K/4K x 9 Parallel Clocked FIFO <»72211 q! ” “1 , QS72241 FEATURES DESCRIPTION • • • • • The QS72211/221/231/241 are high-speed 512/1K/ 2K/4Kx9 parallel, clocked FIFOs, respectively. These