Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    54BALL Search Results

    54BALL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H9ccnnn

    Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
    Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz


    Original     		PDF 166MHz H55S2G62MFP-60M 54ball) 133MHz H55S2G62MFP-75M H55S2G22MFP-60M 90ball) H9ccnnn H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M

    Untitled

    Abstract: No abstract text available
    Text: 16Mx72 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M736BFU6 Series DESCRIPTION The HYM72V16M736BFU6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of five 16Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin


    Original     		PDF 16Mx72 PC133 16Mx16 HYM72V16M736BFU6 16Mx72bits 16Mx16bits 54ball 144pin

    microDIMM

    Abstract: No abstract text available
    Text: 8Mx72 bits PC100 SDRAM Unbuffered MicroDIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8M755HC L FU6 Series DESCRIPTION The HYM71V8M755HCTU6 Series are 8Mx72bits Synchronous DRAM Modules. The modules are composed of five 8Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin


    Original     		PDF 8Mx72 PC100 8Mx16 HYM71V8M755HC HYM71V8M755HCTU6 8Mx72bits 8Mx16bits 54ball 144pin HYM71V8M755HCFU6 microDIMM

    Untitled

    Abstract: No abstract text available
    Text: 128Mb Mobile RAM http://www.elpida.com Description Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”. 128Mb Mobile RAM achieves low power consumption via three special low power functions, and extends the battery life in mobile applications. Additional advantages of 128Mb Mobile RAM are that it saves space in the system by the adoption of a 54ball FBGA Fine-pitch Ball Grid Array package, and that it offers a high-speed data transfer rate using pipeline architecture.


    Original     		PDF 128Mb 54ball 256Mb 54-ball 100MHz 133MHz 16-bit

    Untitled

    Abstract: No abstract text available
    Text: SN54LVT16245B, SN74LVT16245B 3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com SCBS715D – FEBRUARY 2000 – REVISED FEBRUARY 2006 FEATURES • • • • • • • • • • Member of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS


    Original     		PDF SN54LVT16245B, SN74LVT16245B 16-BIT SCBS715D

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		PDF CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH

    Untitled

    Abstract: No abstract text available
    Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A16LAx 8Mx16) 160ns 350uA 400uA

    LD374A

    Abstract: No abstract text available
    Text: SN74LVC16374A 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCAS728A – OCTOBER 2003 – REVISED OCTOBER 2005 FEATURES • • • • • • • DGG, DGV, OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family


    Original     		PDF SN74LVC16374A 16-BIT SCAS728A 000-V A114-A) LD374A

    74AVCB164245GRDR

    Abstract: A115-A C101 SN74AVCB164245
    Text: SN74AVCB164245 16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES394D – JUNE 2002 – REVISED JUNE 2005 • FEATURES • • • • • Member of the Texas Instruments Widebus Family DOC™ Circuitry Dynamically Changes Output


    Original     		PDF SN74AVCB164245 16-BIT SCES394D 74AVCB164245GRDR A115-A C101 SN74AVCB164245

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC16374A 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCAS728A – OCTOBER 2003 – REVISED OCTOBER 2005 FEATURES • • • • • • • DGG, DGV, OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family


    Original     		PDF SN74LVC16374A 16-BIT SCAS728A 000-V A114-A)

    K4S641633F

    Abstract: No abstract text available
    Text: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S641633F-R 4Mx16 54CSP 16Bit K4S641633F

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    K4S56163LC

    Abstract: No abstract text available
    Text: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC

    K4S641633H-R

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54FBGA K4S641633H-R

    BFR15

    Abstract: No abstract text available
    Text: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF BFR15

    K4S561633C

    Abstract: No abstract text available
    Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C

    K4S561633F

    Abstract: K4S561633F-X
    Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		PDF K4S561633F 16Bit 54BOC K4S561633F-X

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M28163PF 16Bit 54CSP

    Untitled

    Abstract: No abstract text available
    Text: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4M64163PH 16Bit 54CSP

    Untitled

    Abstract: No abstract text available
    Text: SN54LVTH16244A, SN74LVTH16244A 3.3-V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • • • • Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V


    Original     		PDF SN54LVTH16244A, SN74LVTH16244A 16-BIT

    Untitled

    Abstract: No abstract text available
    Text: SN54LVTH162374, SN74LVTH162374 3.3-V ABT 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS www.ti.com SCBS262M – JULY 1993 – REVISED NOVEMBER 2006 FEATURES • • • • • • • • • • • Members of the Texas Instruments Widebus


    Original     		PDF SN54LVTH162374, SN74LVTH162374 16-BIT SCBS262M

    A115-A

    Abstract: LVTH16245A SN54LVTH16245A SN74LVTH16245A
    Text: SN54LVTH16245A, SN74LVTH16245A 3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • • • • • • Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V Operation


    Original     		PDF SN54LVTH16245A, SN74LVTH16245A 16-BIT A115-A LVTH16245A SN54LVTH16245A SN74LVTH16245A