ISOPLUS MOSFET Search Results

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

IXAN0022

Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Contextual Info: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS

Contextual Info: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS 220TM Symbol Test Conditions Maximum Ratings

IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance

Abstract: MOSFET OF K SERIES IXYS GMM 3x160-0055X2 IXYS Corporation power mosfet smd package
Contextual Info: IXYS Extending ISOPLUS-DILTM Package Range Less copper, Less Weight, Better Performance Biel, Switzerland, May 14, 2009 – IXYS Corporation NASDAQ: IXYS announced today the extension of the ISOPLUS-DILTM package range using the latest generation TrenchMVTM

40N60SCD1

Abstract: ixkf40n60scd1 IXYS DS 145
Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873

Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

3x120-0075X2-SMD

Abstract: GMM 3x180-004x2 IXYS GMM 3x160-0055X2 Measurement of the circuit stray inductance L 3x100-01X1 single phase moulded bridges
Contextual Info: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 10-09 October 2009 COVER STORY ISOPLUS-DIL Series Designed for Highest Reliability The GWM series in ISOPLUS-DIL™ package Dual-In-Line has been developed to production standard. It is a transfer moulded module which combines the advantage of a

32N12

Abstract: 32N120P
Contextual Info: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions

IXTF200N10T

Abstract: 200N1
Contextual Info: Preliminary Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings

20n60c

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600

20N60C

Abstract: UPS 380v
Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

13N50

Abstract: IXTH12N50A
Contextual Info: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advance Technical Information IXTF200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 120A Ω ≤ 6.3mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTF200N10T RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated = 100V = 90A Ω ≤ 7mΩ ISOPLUS i4-PakTM (5-lead) Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions

tl 078

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

123B16

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL36N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 26A Ω 260mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings

IXFC16N50P

Abstract: 16n50 16N50P F16N f16n50
Contextual Info: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220

Contextual Info: Preliminary Technical Information IXTF02N450 High Voltage Power MOSFET VDSS ID25 = 4500V = 200mA   625 RDS on (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings

IXUC160N075

Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous