ISOPLUS220HV Search Results

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 3 G Symbol Conditions Maximum Ratings

15N80Q

Abstract: IXFH15N80Q
Contextual Info: IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET VDSS ID25 RDS on Q-Class Electrically Isolated Back Surface = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg ISOPLUS220TM Symbol Test Conditions Maximum Ratings

IXYS DSI 45

Contextual Info: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220HVTM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet G S Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous