IT11215 Search Results
IT11215 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
82306
Abstract: marking WZ 3HP04MH A0445
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3HP04MH ENA0445 900mm2 A0445-4/4 82306 marking WZ 3HP04MH A0445 | |
A0639-3
Abstract: SSFP package IT11215 A0639
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Original |
3HP04SS ENA0639 145mm80mm1 A0639-4/4 A0639-3 SSFP package IT11215 A0639 | |
EC4305CContextual Info: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C |
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EC4305C ENA0874 A0874-4/4 EC4305C | |
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Contextual Info: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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SCH2309 ENA0876 900mm20 A0876-4/4 | |
3HP04CHContextual Info: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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3HP04CH ENA0873 900mm20 A0873-4/4 3HP04CH | |
IT11215Contextual Info: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。 |
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SCH2309 900mm2 100mA 100mA, IT11217 900mm2 IT12739 --800mA --10V IT11215 | |
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Contextual Info: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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3HP04S ENA0877 A0877-4/4 | |
IT11215Contextual Info: MCH6651 注文コード No. N A 0 8 7 5 三洋半導体データシート N MCH6651 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。 |
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MCH6651 900mm2 100mA 100mA, --200mA IT11217 900mm2 IT12738 IT12751 IT11215 | |
IT11215Contextual Info: MCH6651 Ordering number : ENA0875 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6651 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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MCH6651 ENA0875 900mm20 A0875-4/4 IT11215 | |
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Contextual Info: 3HP04MH Ordering number : ENA0445 P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS |
Original |
ENA0445 3HP04MH 900mm2 A0445-4/4 |