ITT OL 170 Search Results

diode BA170

Abstract: BA170 BA170 diode ITT diode lsi BA170
Contextual Info: ITT SEMICOND/ INTERNETALL SÜE ]> • MbflS?!! GGOBTM? L3b M I S I BA170 'T-Ol-0‘1 Silicon Epitaxial Planar Diode for universal use in consumer electronic and for switching applications max. 1.9 0 T \ Cathode Mark m a x . 0 .5 2 <3 This diode is delivered taped.

Contextual Info: BiCMOS Gate Array LZ97 Series LZ97 Series • BiCMOS Gaie Array Description ■ The LZ97 series is a BiCMOS gate array fabri­ cated using high speed CMOS gate for internal gate unit and bipolar transistors for peripheral buffer cir­ cuit. It is best suited to systems with high speed re­

itt ol 170

Contextual Info: PRELIMINARY DATA SHEET HAL300 Differential Hall Effect Sensor 1C A Edition June 14, 1995 62 5 1 -3 4 5 -3 P D 4bfl2711 QD0S231 43b ITT Semiconductors ITT HAL 300 PRELIMINARY DATA SHEET Differential Hall Effect Sensor 1C HAL 300 in CMOS technology Vsup Vsup

hall effect transistor 502a

Abstract: SENSOR HALL 504A 506A hall switch 506a hall ITT Semiconductors HAL506 SENSOR HALL 508a hall 502a package marking 504c HAL503
Contextual Info: HAL501 .HAL506 HAL508 Hall Effect Sensor IC Specifications in CMOS technology The types differ according to the magnetic flux density values for the magnetic switching points, the tempera­ ture behavior of the magnetic switching points, and the mode of switching.

SLA3018

Abstract: SLA3030 SLA3042 SLA3055 SLA3075 SLA3109 SLA3125 SLA3216
Contextual Info: P F 757-02 SLA30000 Series H igh Speed G ate A rray • Super high-speed, and high density gate array • Dual power supply operation • Raw gates from 18K to 21 6K gates Sea of gates DESCRIPTION The SLA30000 Series is an SOG-type CMOS gate array featuring the very high-speed operations, high density,

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

ITT Intermetall

Abstract: ITT ccu 3000 i
Contextual Info: Edition O ct. 8, 1996 6 2 5 1-4 0 9 -1 PD ITT INTERMETALL 4bö2711 OOObb44 b05 VPC 32xx PRELIMINARY DATA SHEET Contents Page Section Title 4 4 4 5 1. 1.1. 1.2. 1.3. Introduction System Architecture Video Processor Family VPC Applications 6 6 6 6 6 6 6 6 8

53C94

Abstract: 17058a AM85C80 53c94 NCR NCR 53C94 17058A-004A AM53C96 NCR53C94 NCR SCSI audi a3
Contextual Info: ADVANCED MICRO D E V I C E S 5^E D • 0257525 GGM2fib3 b5D ■ AUDI A D V A N C E IN F O R M A T IO N Am53C94LV Low-Voltage, High-Performance SCSI Controller Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ ■ ■ ■ ■ ■ ■ ■ ■ Functionally compatible with NCR 53C94

Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Contextual Info: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection

ITT Intermetall

Contextual Info: S Ä 5 997 IT T I N T E R M E T A L L MbflEVll □□Qbb'iS 3bfl VPC 32x5C PRELIMINARY DATASHEET Contents Page Section Title 4 4 4 5 1. 1.1. 1.2. 1.3. Introduction System Architecture Video Processor Family VPC Applications 6 6 6 6 6 6 6 6 7 7 8 8 8 9 9 9

itt ol 170

Contextual Info: Edition May 15, 1997 6251-437-1PD ITT INTERMETALL 4bflE711 0 0 0 b S 7 b 234 VDP 31xxB PRELIMINARY DATA SHEET Contents Page Section Title 5 6 1. 1.1. Introduction VDP Applications 9 10 10 11 11 11 11 11 11 12 12 13 13 13 14 15 15 15 16 17 17 17 17 18 18 18

Contextual Info: PF757-02 EPSON SLA30000 Series High Speed Gate Array • Super high-speed, and high density gate array • Dual power supply operation • Raw gates from 18K to 216K gates Sea of gates DESCRIPTION The SLA30000 Series is an SOG-type CMOS gate array featuring the very high-speed operations, high density,

hef40938

Abstract: HEF4093BP Multivibrator HEF4093BT hef4093 hef4093b HEF4093BP applications HEF4093BD HEF40 sot108a
Contextual Info: HEF4093B QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER The HEF4093B consists of four Schmitt-trigger circuits. Each circu it functions as a tw o-input NAND gate w ith Schmitt-trigger action on both inputs. The gate switches at different points fo r positive and negative-going signals. The difference between the positive voltage Vp and the negative voltage

MC14583

Abstract: 5zzd MC14584B MC14583B CD401 MC14069UB MC14XXXBCL MC14XXXBCP MC14XXXBD ceramic case 632
Contextual Info: M O T O R O L A DU A L SC H M ITT TRIGG ER ^ J L SUFFIX CERAMIC CASE 620 | I I P SUFFIX PLASTIC CASE 548 T h e M C T 45 83B is a d u a l S c h m itt trig g e r c o n s tru c te d w ith c o m ­ p le m e n ta ry P-cbannel and N -chan nel M O S devices o n a m o n o lith ic

BU4584B

Abstract: BU4S584
Contextual Info: Standard ICs Single Schmitt trigger BU4S584 The BU4S584 is an ultra-com pact 1C with one circuit of the inverter-type Schm itt trigger, BU4584B, built into an SMP package. •F e a tu re s 1 Low current consum ption. 2) S u p e r-m in i m o ld p a c k a g e d e s ig n e d fo r s u rfa c e

MC14583

Contextual Info: M O T O R O L A DUAL SCHMITT TRIGGER L SUFFIX C E R A M IC CA S E 620 T h e M C 1 4 5 8 3 B is a dual S chm itt trigger constructed w ith com ­ plem entary P-channel and N-channel M OS devices on a m onolithic silicon substrate. Each S c h m itt trigger is fu nctio nally independent

itt ol 170

Abstract: ITT DIODE 125 diode 1000v 50a
Contextual Info: Preliminary Data Sheet No. P D -9.935 International Rectifier i l l ] ir g k i o o "CHOPPER" INT-A-PAK MODULES 5o m i2 Fast™ IGBT • Rugged Design •Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant •Switching-Loss Rating includes all "tail"

IG8T

Contextual Info: This m a ie rio l and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, c o pied le n t, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the m anufacturing purposes w ith o u t

asynchronous 4bit up down counter using jk flip flop

Abstract: counter 74168 Multiplexer 74152 3-8 decoder 74138 synchronous counter using 4 flip flip 74183 alu 7444 series Excess-3-gray code to Decimal decoder MH 74151 counter 74169 74169 SYNCHRONOUS 4-BIT BINARY COUNTER
Contextual Info: • GENERAL DESCRIPTION T h e M S M 7 0 V 0 0 0 series is the gate array LSI based on the m aster slice m e th o d using the high p erfo rm an ce silicon gate 1.5 m ic ro n H C M O S process w ith th e d u a l-la y e r m etal structure. T his series has th e features to easily realize fu n c tio n s o f th e s c h m itt trigger, c ry s ta l/

Contextual Info: HD74HC221 • Dual M o n o stab le M u ltivib rato rs w ith S c h m itt T rigger Input Each m ultivibrator features both a negative, A , and a posi­ PIN ARR ANG E M E NT tive, B, transition triggered input, either o f which can be used as an in h ib it. Also included is a clear input that when taken

transistor npn d 2058

Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
Contextual Info: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

UPC1701

Abstract: PC1701 UC1701 UPC1701C pc 1701 IC-7935A NEC PC1701 AC100 PC1701C NEC 701
Contextual Info: s < ^ 7 t f — z7 7 ’’ -7 “ 0 ^ " S i l t l ! ] £ § B ip o la r A n a lo g In te g ra te d C irc u it M PC 1701 /f — Y • h U i 3 S M U T Ü J^Y ^y * /iP c i7 o ic i h 7 ^ t ~v ï i z k h m m & ï K . n . f à c o ^ u f i l £& (Z V S y p -y ^ n

Contextual Info: Openbus I/F Components - VMEbus User Manual 4.0 Signals & DC Characteristics This section details the DC characteristics for the ACC and DARF signals. It also provides information concerning the capacitive loading for the devices. 4.1 Terminology The input and output type abbreviations used in this section are defined below. They have

M51906P

Abstract: M51906 LED LEVEL T-52-13-0
Contextual Info: MIT SUB ISHI ELEK {LINEAR} ÖD DE | ba^äEL, 000^170 T | i MITSUBISHI LINEAR ICs ' . 6249826 MITSUBISHI 'M i ELEK /" LINEAR 8 OC 0 9 1 7 0 T -5 2 -1 3 -0 7 6-STEP BAR TYPE LED LEVEL INDICATOR DESCRIPTION PIN CONFIGURATION (TOP VIEW)