IXFL38N100P Search Results
IXFL38N100P Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXFL38N100P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 29A I5-PAK | Original | 5 |
IXFL38N100P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS |
Original |
IXFL38N100P 300ns 338B2 | |
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFL38N100P RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions |
Original |
IXFL38N100P 300ns 100ms 38N100 7-14-09-D | |
tl 078Contextual Info: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings |
Original |
IXFL38N100P 300ns 338B2 tl 078 | |
IXFL38N100P
Abstract: 38N100
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Original |
IXFL38N100P 300ns 100ms 38N100 7-14-09-D IXFL38N100P | |
1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
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Original |
000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P |