IXFR26N120P Search Results

IXFR26N120P Price and Stock

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Littelfuse Inc IXFR26N120P MOSFET N-CH 1200V 15A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR26N120P	Tube			300	1 - 10 - 100 - 1000 $26.13037 10000 $26.13037	Buy Now
Newark	IXFR26N120P	Bulk			300	1 - 10 - 100 - 1000 $27.39 10000 $27.39	Buy Now
RS	IXFR26N120P	Bulk		8 Weeks	30	1 - 10 - 100 $40.41 1000 $40.41 10000 $40.41	Get Quote
IXYS Corporation IXFR26N120P MOSFETs 32 Amps 1200V 0.46 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFR26N120P					1 - 10 - 100 - 1000 $30.62 10000 $30.62	Get Quote
Future Electronics	IXFR26N120P	Tube		26 Weeks	30	1 - 10 - 100 $30.62 1000 $30.62 10000 $30.62	Buy Now
Bristol Electronics	IXFR26N120P		17			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXFR26N120P	Tube			300	1 - 10 - 100 - 1000 $26.13 10000 $26.13	Buy Now
TME	IXFR26N120P		30		1	1 $48.78 10 $38.81 100 $34.83 1000 $34.83 10000 $34.83	Buy Now

IXFR26N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFR26N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A ISOPLUS247		Original	PDF

IXFR26N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFR26N120P Abstract: No abstract text available Text: IXFR26N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   1200V 15A  550m 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings	Original	PDF	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 10-24-11-C IXFR26N120P
IXFR26N120P Abstract: 26N120P ISOPLUS247 nf725 Text: PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	PDF	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 3-28-08-B IXFR26N120P ISOPLUS247 nf725
26N120P Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 1-07-A
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR26N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 15A Ω 500mΩ 300ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 3-28-08-B
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P