IXGH Search Results

IXGH Datasheets (288)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH100N30C3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 75A 460W TO247	Original	PDF		6
IXGH10N100	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	47.15KB	2
IXGH10N100A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	47.15KB	2
IXGH10N100AU1	IXYS	Low Vce(sat) IGBT With Diode High Speed IGBT With Diode	Original	PDF	124.23KB	6
IXGH10N100U1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode	Original	PDF	124.23KB	6
IXGH10N170	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 20A 110W TO247	Original	PDF		5
IXGH 10N170	IXYS	High Voltage IGBT	Original	PDF	99.26KB	2
IXGH10N170	IXYS	High Voltage IGBT	Original	PDF	99.26KB	2
IXGH10N170A	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 10A 140W TO247	Original	PDF		5
IXGH10N170A	IXYS	High Voltage IGBT	Original	PDF	91.68KB	2
IXGH10N300	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 18A 100W TO247AD	Original	PDF		5
IXGH10N60	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	57.44KB	2
IXGH10N60A	IXYS	Low VCE(sat) IGBT High speed IGBT	Original	PDF	57.44KB	2
IXGH10N60AU1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs	Original	PDF	113.25KB	6

IXGH10N60U1	IXYS	Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs	Original	PDF	113.25KB	6
IXGH120N30B3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 75A 540W TO247	Original	PDF		5
IXGH120N30C3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 300V 75A 540W TO247	Original	PDF		6
IXGH12N100	IXYS	1000V low voltage high speed IGBT	Original	PDF	35.41KB	2
IXGH12N100A	Unknown	Low VCE(sat) High Speed IGBT	Original	PDF	35.42KB	2
IXGH12N100AU1	IXYS	1000V high voltage IGBT	Original	PDF	153.7KB	5

...

IXGH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
50n60b Abstract: 50n60 50N6 IXGH50N60B Contextual Info: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	50N60B O-247 O-247AD 728B1 50n60b 50n60 50N6 IXGH50N60B	PDF
Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	15N120C O-247 O-268	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
igbt induction cooker Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B	PDF
28n60 Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	28N60BD1 O-247 728B1 123B1 728B1 065B1 28n60	PDF
application notes IXGH 6N170 Abstract: 6N170 Contextual Info: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	6N170 O-247 O-268 728B1 application notes IXGH 6N170 6N170	PDF
12N100A Abstract: 12n100 IXGH12N100 IXGH12N100A Contextual Info: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C	Original	12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A	PDF
IXGH32N60C Abstract: 32N60C IXGH32N60 Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C	Original	32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60	PDF
10N170 Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	10N170 O-247 O-268 728B1	PDF
17n100a Abstract: NC2030 17N100AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	N100U1 N100AU1 17N100U1 17N100AU1 17n100a NC2030 17N100AU1	PDF
IXGH24N60B Abstract: RG10 Contextual Info: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	24N60B O-247 728B1 IXGH24N60B RG10	PDF
24N170 Contextual Info: Advance Technical Data High Voltage IGBT IXGH 24N170 VCES IXGT 24N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	24N170 O-247 O-268 728B1	PDF
28N60B Abstract: em 404 Contextual Info: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms	Original	28N60B O-247 O-268 28N60B em 404	PDF
Contextual Info: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF

32N60B Abstract: 32n60 32N60BD1 D25VF IXGH32N60B Contextual Info: HiPerFASTTM IGBT IXGH 32N60B IXGT 32N60B IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	32N60B 32N60BD1 O-247 O-268 32N60B 32n60 32N60BD1 D25VF IXGH32N60B	PDF
IXGH30N60B Abstract: IXGT30N60B Contextual Info: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms	Original	IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B	PDF
60N60C2 Abstract: ixgh60n60c2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2	PDF
Contextual Info: Advance Technical Information IXGH 35N120C IXGT 35N120C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	35N120C O-247 O-268	PDF
30N60 Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	Wei60A 30N60 30N60A O-204AE 30N60 30N60A 30N60U1 N60A igbt 30N60 IXGH30N60U1 IXGH30N60AU1 IXGM30N60A	PDF
10N60U1 Abstract: 10n60au1 N60AU1 ixgh 1500 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N60U1 IXGH 10 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	N60U1 N60AU1 Moun000 10N60AU1 10N60U1 10N60U1 10n60au1 N60AU1 ixgh 1500	PDF
.25N16 Abstract: 25N160 Contextual Info: High Voltage IGBT VCES = 1600 V IC25 = 75 A VCE sat = 2.5 V IXGH 25N160 IXGT 25N160 For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	25N160 IC110 O-247 O-268 .25N16 25N160	PDF
30n60 Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2	OCR Scan	IXGH30 N60U1 N60AU1 30N60U1 30N60AU1 30n60 IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A	PDF
32N90B2 Abstract: 32n90 Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXGH 32N90B2 B2-Class High Speed IGBTs IXGT 32N90B2 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30	Original	32N90B2 IC110 O-247 O-268 32N90B2 32n90	PDF
IXGH72N60C3 Contextual Info: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient	Original	IXGH72N60C3 IC110 40-100kHz 72N60C3 11-25-09-C IXGH72N60C3	PDF

IXGH Search Results

IXGH Datasheets (288)

IXGH Datasheets Context Search

50n60b

20N60B

igbt induction cooker

28n60

application notes IXGH 6N170

12N100A

IXGH32N60C

10N170

17n100a

IXGH24N60B

24N170

28N60B

32N60B

IXGH30N60B

60N60C2

30N60

10N60U1

.25N16

30n60

32N90B2

IXGH72N60C3