IXGN Search Results
IXGN Datasheets (38)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXGN100N170 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 1700V 160A GENX3 SOT-227B | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN120N60A3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 200A 600V SOT-227B | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN120N60A3D1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 200A 600V SOT-227B | Original | 7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N170 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT | Original | 202.18KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60 |
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HiPerFAST IGBT | Original | 134.07KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60A |
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TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B | Original | 134.08KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60A2 |
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IGBT Discretes: Low Saturation Voltage Types Single IGBT | Original | 562.08KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60B |
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TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B | Original | 570.99KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60B |
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HiPerFASTTM IGBT | Original | 68.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60B3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 300A 600V SOT-227B | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN200N60N |
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600V HiPerFAST IGBT | Original | 68.41KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN320N60A3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V SOT-227B | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN32N60B |
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600V HiPerFAST IGBT | Original | 35.13KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN32N60BU1 |
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600V HiPerFAST IGBT with diode | Original | 86.31KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXGN400N30A3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 300V SOT-227B | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN400N60A3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 400A 600V SOT-227B | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN400N60B3 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 430A SOT-227 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN50N100 |
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Power MOSIGBTs | Scan | 680.12KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN50N120C3H1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 95A SOT-227 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGN50N50 |
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Power MOSIGBTs | Scan | 680.12KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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200N60AContextual Info: HiPerFASTTM IGBT IXGN 200N60A VCES IC25 VCE sat tfi = = = = 600 V 200 A 2.5 V 200 ns Preliminary data E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient |
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200N60A 200N60A | |
IXGN60N60C2
Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
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60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D | |
IXGN400N60B3Contextual Info: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 |
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IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3 | |
IXGN320N60A3Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3 | |
IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
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IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16 | |
50N6
Abstract: xs 004 a
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OCR Scan |
50N60BD3 OT-227B, 50N6 xs 004 a | |
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Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A | |
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Contextual Info: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient |
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200N60 200N60A OT-227B, | |
ixgn100n170
Abstract: 100N170 IC1700 ixgn100n
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IXGN100N170 OT-227B, E153432 100N170 ixgn100n170 IC1700 ixgn100n | |
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Contextual Info: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient |
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50N60B 120ns OT-227B E153432 728B1 | |
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Contextual Info: HiPerFASTTM IGBTs with Diode VCES = IC110 = VCE sat ≤ trr = IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs E E 60C2 60C2D1 600V 60A 2.5V 35ns SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR |
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IC110 IXGN60N60C2 IXGN60N60C2D1 60C2D1 OT-227B, E153432 2x61-06A | |
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Contextual Info: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz VCES IC25 VCE sat = 600 V = 200 A = 1.35 V Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 |
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200N60A2 OT-227B, IC110 728B1 123B1 728B1 065B1 | |
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Contextual Info: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN50N120C3H1 VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 |
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IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A | |
7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
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OCR Scan |
30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh | |
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BD3 diode
Abstract: 50N60BD2 w a2a
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50N60BD2 50N60BD3 Applic100 BD3 diode w a2a | |
ixgn60n60Contextual Info: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous |
OCR Scan |
60N60 OT-227BminiBLOC ixgn60n60 | |
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Contextual Info: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient |
OCR Scan |
50N60B | |
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Contextual Info: VCES = 600V IC110 = 120A VCE sat ≤ 1.35V IXGN120N60A3 IXGN120N60A3D1 GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching SOT-227B, miniBLOC E153432 E E 60A3 G 60A3D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR |
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IC110 IXGN120N60A3 IXGN120N60A3D1 OT-227B, E153432 60A3D1 IF110 2x61-06A | |
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Contextual Info: VCES = 600V IC110 = 200A VCE sat ≤ 1.50V IXGN200N60B3 GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A | |
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Contextual Info: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A | |
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Contextual Info: VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGN320N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A | |
ixgn50n120c3h1
Abstract: g50n IF110 g50n120c3
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IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A ixgn50n120c3h1 g50n IF110 g50n120c3 | |
IXGN82N120C3H1
Abstract: IF110 s7900
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IXGN82N120C3H1 IC110 OT-227B, E153432 IF110 338B2 IXGN82N120C3H1 IF110 s7900 | |
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Contextual Info: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ |
OCR Scan |
50N60BD3 OT-227B, 50N60BD3 | |