IXRH40N120 Search Results

IXRH40N120 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXRH40N120	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A 300W TO247AD	Original	PDF		5
IXRH40N120	IXYS	IGBT with Reverse Blocking Capability	Original	PDF	52.99KB	2
IXRH40N120SN	IXYS	TRANS IGBT CHIP P/N 1200V 1200A 3TO-247 AD	Original	PDF	107.93KB	5

IXRH40N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40N120 Abstract: 40N120 DATASHEET D-68623 IXRH40N120 Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES	Original	40N120 O-247 IXRH40N120	PDF

Catalog Datasheet

Type

Document Tags

PDF

40N120

Abstract: 40N120 DATASHEET D-68623 IXRH40N120
Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES

Original

40N120 O-247 IXRH40N120 40N120 40N120 DATASHEET D-68623 IXRH40N120

PDF

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Original

MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

PDF

Contextual Info: IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE sat = 2.3 V typ. IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES

Original

40N120 O-247 IXRH40N120

PDF