IXTA160N075T Search Results

IXTA160N075T Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA160N075T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263	Original	PDF		5
IXTA160N075T7		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263-7	Original	PDF		5

IXTA160N075T Price and Stock

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Littelfuse Inc IXTA160N075T MOSFET N-CH 75V 160A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA160N075T	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IXTA160N075T	Bulk			300	1 - 10 - 100 $2.44 1000 $1.96 10000 $1.83	Buy Now
Littelfuse Inc IXTA160N075T7 MOSFET N-CH 75V 160A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA160N075T7	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	IXTA160N075T7	Bulk			300	1 - 10 - 100 $2.60 1000 $2.09 10000 $1.94	Buy Now
IXYS Corporation IXTA160N075T MOSFETs 160 Amps 75V 5.5 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTA160N075T	Tube			300	1 - 10 - 100 - 1000 $2.33 10000 $2.28	Buy Now
IXYS Corporation IXTA160N075T7 MOSFETs 160 Amps 75V 5.5 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTA160N075T7	Tube			300	1 - 10 - 100 - 1000 $2.48 10000 $2.43	Buy Now

IXTA160N075T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP160N075T Abstract: IXTA160N075T 160N075 160N075T 175C 25a64 Contextual Info: Preliminary Technical Information IXTA160N075T IXTP160N075T TrenchMVTM Power MOSFET = 75 V = 160 A Ω ≤ 6.0 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA160N075T IXTP160N075T O-263 160N075T_ IXTP160N075T IXTA160N075T 160N075 160N075T 175C 25a64	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T VDSS ID25 = 75 V = 160 A Ω ≤ 6.0 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	IXTA160N075T IXTP160N075T 160N075T_	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N075T7 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA160N075T7 O-263 160N075T	PDF
160N075T Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 VDSS ID25 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTA160N075T7 O-263 160N075T 160N075T	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF