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    Littelfuse Inc IXTH240N15X4

    MOSFET N-CH 150V 240A TO247
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    DigiKey IXTH240N15X4 Tube 561 1
    • 1 $13.47
    • 10 $13.47
    • 100 $8.682
    • 1000 $13.47
    • 10000 $13.47
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    Newark IXTH240N15X4 Bulk 30 1
    • 1 $13.2
    • 10 $10.85
    • 100 $8.51
    • 1000 $7.88
    • 10000 $7.88
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    CoreStaff Co Ltd IXTH240N15X4 20
    • 1 $14.237
    • 10 $8.98
    • 100 $8.493
    • 1000 $8.493
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    Littelfuse Inc IXTH150N15X4

    MOSFET N-CH 150V 150A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH150N15X4 Tube 390 1
    • 1 $11.9
    • 10 $11.9
    • 100 $7.604
    • 1000 $11.9
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    Littelfuse Inc IXTH80N65X2

    MOSFET N-CH 650V 80A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH80N65X2 Tube 303 1
    • 1 $9.43
    • 10 $9.43
    • 100 $8.04
    • 1000 $8.04
    • 10000 $8.04
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    Littelfuse Inc IXTH76N25T

    MOSFET N-CH 250V 76A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH76N25T Tube 300 1
    • 1 $6.6
    • 10 $6.6
    • 100 $4.04133
    • 1000 $3.25712
    • 10000 $3.25712
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    Littelfuse Inc IXTH120N20X4

    MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH120N20X4 Tube 264 1
    • 1 $6.68
    • 10 $6.68
    • 100 $5.21433
    • 1000 $5.21433
    • 10000 $5.21433
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    IXTH Datasheets (392)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH02N250 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO247 Original PDF
    IXTH02N450HV IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 4500V 0.2A TO247HV Original PDF
    IXTH04N300P3HV IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 2000V TO 3000V POLAR3 POWER MOSF Original PDF
    IXTH06N220P3HV IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    IXTH100N25P IXYS Transistor Mosfet N-CH 250V 100A 3TO-247 Original PDF
    IXTH102N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-247 Original PDF
    IXTH102N20T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 102A TO-247 Original PDF
    IXTH10N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXTH10N100 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH10N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH10N100 Unknown FET Data Book Scan PDF
    IXTH10N100A Unknown FET Data Book Scan PDF
    IXTH10N100D IXYS Three phase full bridge with Trench MOSFETs in DCB isolated high current package Original PDF
    IXTH10N100D IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A TO-247 Original PDF
    IXTH10N100D2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247 Original PDF
    IXTH10N60 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH10N60 IXYS High Voltage Power MOSFETs Scan PDF
    IXTH10N60 Sharp 600 V, 10 A, sourse-drain diode Scan PDF
    IXTH10N60A IXYS High Voltage Power MOSFETs Scan PDF
    IXTH10N60A IXYS High Voltage Power MOSFETs Scan PDF
    ...

    IXTH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTT16P60P

    Abstract: IXTH16P60P 16P60P
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH16P60P IXTT16P60P VDSS ID25 = = ≤ RDS on TO-268 (IXTT) P-Channel Enhancement Mode Avalanche Rated G Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTH16P60P IXTT16P60P O-268 100ms 16P60P IXTT16P60P IXTH16P60P 16P60P

    10N90

    Abstract: No abstract text available
    Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient


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    PDF 12N90 O-204 O-247 O-247 O-204 10N90

    60n10

    Abstract: IXTH60N10
    Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


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    PDF 60N10 TJM15 O-268 728B1 123B1 728B1 065B1 60n10 IXTH60N10

    60N15

    Abstract: No abstract text available
    Text: Advance Technical Information Standard Power MOSFET VDSS = 150 V ID cont = 60 A Ω RDS(on) = 33 mΩ IXTH 60N15 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 150


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    PDF 60N15 O-247 728B1 123B1 728B1 065B1 60N15

    60N25

    Abstract: D2560 UPS SIEMENS
    Text: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250


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    PDF 60N25 728B1 123B1 728B1 065B1 60N25 D2560 UPS SIEMENS

    24P20

    Abstract: No abstract text available
    Text: Standard Power MOSFET IXTH 24P20 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -200 V VGS Continuous ±20 V VGSM Transient ±30 V A ID25 TC = 25°C


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    PDF 24P20 O-247 728B1 123B1 728B1 065B1 24P20

    50n30

    Abstract: N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight
    Text: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 50N30 O-247 O-268 728B1 123B1 728B1 065B1 50n30 N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight

    16p20

    Abstract: ixth 16p20
    Text: Standard Power MOSFET IXTH 16P20 P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = -200 V = -16 A = 0.16 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 16P20 O-247 728B1 123B1 728B1 065B1 16p20 ixth 16p20

    10P60

    Abstract: 125OC
    Text: IXTH 10P60 VDSS = -600 V ID25 = -10 A RDS on = 1Ω Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -600 V VGS Continuous ±20


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    PDF 10P60 O-247 -300V 728B1 125OC

    75N10

    Abstract: No abstract text available
    Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V


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    PDF 67N10 75N10 O-204 O-247 O-204 O-247 75N10

    40N30

    Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
    Text: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C


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    PDF 35N30 40N30 O-204 O-247 O-204 40N30 IXTH40N30 IXTM35N30 IXTM40N30 40AA

    IXTH03N400

    Abstract: IXTV03N400S PLUS220SMD 03N400
    Text: Advance Technical Information IXTH03N400 IXTV03N400S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 4000 V VGSS Continuous


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    PDF IXTH03N400 IXTV03N400S 300mA O-247 03N400 IXTH03N400 IXTV03N400S PLUS220SMD

    IXTP450P2

    Abstract: IXTH450P2 IXTQ450P2
    Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings


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    PDF IXTP450P2 IXTQ450P2 IXTH450P2 400ns O-220AB 338B2 IXTP450P2 IXTH450P2 IXTQ450P2

    t16n50

    Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
    Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250

    IXTP10P50P

    Abstract: 10P50P IXTH10P50P IXTH10P50
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P S G D TAB D D(TAB) S G Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500


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    PDF O-263 IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P O-247 O-220 100ms 10P50P IXTH10P50

    10N100D

    Abstract: DSA003705
    Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C


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    PDF 10N100D 10N100D O-247 O-247 O-268 O-268 DSA003705

    52P10p

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


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    PDF O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p

    22N50P

    Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
    Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 22N50P 22N50PS O-247 PLUS220 IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P

    ADSP-210xx

    Abstract: IXI1222 IXI1688S ixthos 741G ADSP-2101 IXI1204 IXI1210 IXI1241 IXI1688P
    Text: Ixthos, Inc., 741-G Miller Drive SE, Leesburg, VA 20175 phone 703 779-7800 fax (703) 779-7805 email ixthos@ixthos.com website: www.ixthos.com Ixthos has provided commercial-off-the-shelf (COTS) integrated hardware and software solutions for the Analog Devices floating point DSP family (ADSP210xx) since 1991. The


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    PDF 741-G ADSP210xx) 2106x ADSP-210xx IXI1222 IXI1688S ixthos 741G ADSP-2101 IXI1204 IXI1210 IXI1241 IXI1688P

    T1N200

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


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    PDF IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500


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    PDF IXTH/IXTM21N50 IXTH/IXTM24N50 O-247 21N50 24N50 4bflb22b

    Untitled

    Abstract: No abstract text available
    Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C


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    PDF 11N80 13N80 11N80 13N80 O-204 O-247 IXTM13N80

    IXTH24N45

    Abstract: No abstract text available
    Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan
    PDF 0D003S5 IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 O-204 O-247 IXTH24N50, IXTM24N50,

    15N60

    Abstract: IXTM15N60
    Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r


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    PDF 4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60