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    IXTH10N90 Search Results

    IXTH10N90 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH10N90 IXYS MegaMOS FET Scan PDF
    IXTH10N90 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH10N90 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH10N90 Unknown FET Data Book Scan PDF
    IXTH10N90A Unknown FET Data Book Scan PDF

    IXTH10N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30

    IRFP260 equivalent

    Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
    Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200


    Original     		PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent

    1RFZ44

    Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
    Text: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 3TO-220 IRL510 O-220 IRL511 1RFZ44 1RL520 1RFZ22 IRFZ30 IRFZ41 IRF145 1RL540 IRFZ45 1xys

    1XYS

    Abstract: 1RFZ40 IRFZ41 1XTH5N100 1RLZ34 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
    Text: - f M € tí: € ft t V ds Vg s or Vd g * V (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N 50 60 60 100 250 500 IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 T0-247 IXTH6N80A O-247 IXTH10N100 1XYS IRFZ41 1XTH5N100 1RLZ34 IRFZ44 IRH254 IRL510

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


    OCR Scan     		PDF IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent

    1XYS

    Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
    Text: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)


    OCR Scan     		PDF Ta-25Â IRFZ35 O-220AB 1RFZ40 IRFZ42 SSH6N70A SSH7N12 SSH7N15 SSH8N12 1XYS 1RL630 1rlz44 IRLZ20 IRFZ44 IRH254 IRL510

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		PDF IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50

    Untitled

    Abstract: No abstract text available
    Text: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM


    OCR Scan     		PDF 10N90 12N90 12N90 O-247 O-204 O-204 O-247 IXTH10N90 IXTM12N90

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    10N90

    Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90
    Text: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20


    OCR Scan     		PDF O-247 10N90 12N90 O-204 O-247 00D37Ã U3350 D-68623 IXTH10N90 IXTH12N90 IXTM10N90