IXTM15N80 Search Results

IXTM15N80 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXTM15N80		Unknown	FET Data Book		Scan	PDF	56.92KB	1
IXTM15N80A		Unknown	FET Data Book		Scan	PDF	56.92KB	1

IXTM15N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5n50 Abstract: IXTP3N100A IXTP3N100 1800 IXYS IXTM15N80 IXTM15N80A IXTM20N55 IXTM25N45 IXTM25N45A LM3661TL-1.25 Contextual Info: - 270 - t S s ± € % %l T a=2 5'C f Vd s or Vd g (V) Vg s Id V g s th) Id s s * /CH * /CH (V) Ig s s Po (A) (W) max min (nA) Vg s (V) (uA) Vd s (V) Id («A) (V) (V) ft % 4# F Ds(on) Vd s Vg s 1Ê ( T a = 2 5 ‘C ) b(on) Ciss g fs Coss Crss ^ B m %	OCR Scan	IXTM15N80 T0-204 IXTM15N80A O-204 IXTM20N55 1XTM20N55A O-220 IXTP4N100A 5n50 IXTP3N100A IXTP3N100 1800 IXYS IXTM25N45 IXTM25N45A LM3661TL-1.25	PDF
SIEMENS 800 Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C\|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80	Original	O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF

Catalog Datasheet

Type

Document Tags

PDF

5n50

Abstract: IXTP3N100A IXTP3N100 1800 IXYS IXTM15N80 IXTM15N80A IXTM20N55 IXTM25N45 IXTM25N45A LM3661TL-1.25
Contextual Info: - 270 - t S s *± € * % %l T a=2 5'C f Vd s or Vd g (V) Vg s Id V g s th) Id s s * /CH * /CH (V) Ig s s Po (A) (W) max min (nA) Vg s (V) (uA) Vd s (V) Id («A) (V) (V) ft % 4# F Ds(on) Vd s Vg s 1Ê ( T a = 2 5 ‘C ) b(on) Ciss g fs Coss Crss ^ B m %

OCR Scan

IXTM15N80 T0-204 IXTM15N80A O-204 IXTM20N55 1XTM20N55A O-220 IXTP4N100A 5n50 IXTP3N100A IXTP3N100 1800 IXYS IXTM25N45 IXTM25N45A LM3661TL-1.25

PDF

SIEMENS 800

Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80

Original

O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

PDF

IXFH15N100

Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP

Original

IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

PDF