IXYN Search Results

IXYN 82N120C3

Abstract: 82N120C3 IXYN82N120C3 ixyn82n120 ixyn
Contextual Info: Advance Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous

Contextual Info: Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXYN150N60B3 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M

Contextual Info: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYN82N120C3H1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient ±20 ±30 V

Contextual Info: Advance Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC90 VCE sat tfi(typ) = = ≤ = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXYN82N120C3H1

Abstract: ixyn82n120 ixyn82n120c3
Contextual Info: IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30

IXYN100N120B3H1

Abstract: ixyn100n120b3 123B16
Contextual Info: Advance Technical Information IXYN100N120B3H1 1200V XPTTM IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES IC110 VCE sat tfi(typ) Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES

Contextual Info: Advance Technical Information IXYN120N120C3 1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 120A 3.20V 96ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions E Maximum Ratings VCES

Contextual Info: Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 86A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

82N120C3

Contextual Info: Preliminary Technical Information IXYN82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous

Contextual Info: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

iXYN100N120C3H1

Abstract: ixyn100n120c3
Contextual Info: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXYN100N120C3H1

Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: IXYN82N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 46A 3.2V 93ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Ec Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXYN100N120C3

Abstract: 100N120 100N120C3
Contextual Info: Advance Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

SFH2030F

Abstract: sfh2030 equivalent
Contextual Info: SIEMENS SFH 2030 SFH 2030F DAYLIGHT FILTER SILICO N PIN PHOTODIODE Pa ck age D im ensions in Inche s mm Surira not fat .024(0.6) .016(0.4) _ .100 (2 54) J Chip Position .232(5.9) .217(5.5) .189(4.8) .165 (4.2) .031(0.8) .016(0.4) ± , ♦ 200(5 1) " ’.189(4.8)